0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

doi:10.1088/1674-1056/22/2/026802

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/22/2/026802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers

季莲^a, 陆书龙^a, 江德生^b, 赵勇明^a, 谭明^a, 朱亚棋^a, 董建荣^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P O Box 912, Beijing 100083, China

收稿日期:2012-06-09 修回日期:2012-07-17 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 61176128); the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KGCX2-YW-324); and Suzhou Municipal Solar Cell Research Project, China (Grant No. SYG201145).

0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers

Ji Lian (季莲)^a, Lu Shu-Long (陆书龙)^a, Jiang De-Sheng (江德生)^b, Zhao Yong-Ming (赵勇明)^a, Tan Ming (谭明)^a, Zhu Ya-Qi (朱亚棋)^a, Dong Jian-Rong (董建荣 )^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P O Box 912, Beijing 100083, China

Received:2012-06-09 Revised:2012-07-17 Online:2013-01-01 Published:2013-01-01
Contact: Lu Shu-Long E-mail:sllu2008@sinano.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 61176128); the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KGCX2-YW-324); and Suzhou Municipal Solar Cell Research Project, China (Grant No. SYG201145).

摘要/Abstract

摘要： Single-junction, lattice-mismatched In_0.69Ga_0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAs_yP_1-y buffer layers with a lattice mismatch of ～1.2%, are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In_0.69Ga_0.31As active layers grown on the buffer displayed a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm², which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

关键词: In_0.69Ga_0.39As, thermophotovoltaic devices, InAs_yP_1-y buffer

Abstract: Single-junction, lattice-mismatched In_0.69Ga_0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAs_yP_1-y buffer layers with a lattice mismatch of ～1.2%, are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In_0.69Ga_0.31As active layers grown on the buffer displayed a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm², which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

Key words: In_0.69Ga_0.39As, thermophotovoltaic devices, InAs_yP_1-y buffer

中图分类号: (Semiconductors)

68.55.ag

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 88.40.hj (Efficiency and performance of solar cells) 88.40.jm (Thin film III-V and II-VI based solar cells)

季莲, 陆书龙, 江德生, 赵勇明, 谭明, 朱亚棋, 董建荣 . 0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers[J]. 中国物理B, 2013, 22(2): 26802-026802.

Ji Lian (季莲), Lu Shu-Long (陆书龙), Jiang De-Sheng (江德生), Zhao Yong-Ming (赵勇明), Tan Ming (谭明), Zhu Ya-Qi (朱亚棋), Dong Jian-Rong (董建荣 ). 0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers[J]. Chin. Phys. B, 2013, 22(2): 26802-026802.

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0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers

0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers

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