Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

doi:10.1088/1674-1056/22/2/028101

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 28101-028101.doi: 10.1088/1674-1056/22/2/028101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

王党会^{a b}, 许晟瑞^a, 郝跃^a, 张进成^a, 许天旱^b, 林志宇^a, 周昊^a, 薛晓咏^a

a State Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Materials Science and Engineering, Xi'an Shiyou University, Xi'an 710065, China

收稿日期:2012-04-29 修回日期:2012-08-09 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002); the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002); the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033); and the Science Fund for Youths Scholars (Grant Nos. 61204006).

Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

Wang Dang-Hui (王党会)^{a b}, Xu Sheng-Rui (许晟瑞)^a, Hao Yue (郝跃)^a, Zhang Jin-Cheng (张进成)^a, Xu Tian-Han (许天旱)^b, Lin Zhi-Yu (林志宇)^a, Zhou Hao (周昊)^a, Xue Xiao-Yong (薛晓咏 )^a

a State Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Materials Science and Engineering, Xi'an Shiyou University, Xi'an 710065, China

Received:2012-04-29 Revised:2012-08-09 Online:2013-01-01 Published:2013-01-01
Contact: Wang Dang-Hui E-mail:wdhyxp@163.com
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002); the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002); the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033); and the Science Fund for Youths Scholars (Grant Nos. 61204006).

摘要/Abstract

摘要： In this paper, Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition (LPMOCVD) are investigated. We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K. The temperature-dependences of GaN phonon modes (A₁ (TO), E₂ (high), and E₁ (TO)) and the linewidths of E₂ (high) phonon peak are studied. The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range, and the relationship can be fitted to the pseudo-Voigt function. From analytic results we find a critical temperature existing in the relationship, which can characterize the anharmonic effects of a-plane GaN in different temperature ranges. In the range of higher temperature, the relationship exhibits an approximately linear behavior, which is consistent with the analyzed results theoretically.

关键词: metal-organic chemical vapor deposition, Raman shift, crystal quality, anharmonic effect

Abstract: In this paper, Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition (LPMOCVD) are investigated. We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K. The temperature-dependences of GaN phonon modes (A₁ (TO), E₂ (high), and E₁ (TO)) and the linewidths of E₂ (high) phonon peak are studied. The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range, and the relationship can be fitted to the pseudo-Voigt function. From analytic results we find a critical temperature existing in the relationship, which can characterize the anharmonic effects of a-plane GaN in different temperature ranges. In the range of higher temperature, the relationship exhibits an approximately linear behavior, which is consistent with the analyzed results theoretically.

Key words: metal-organic chemical vapor deposition, Raman shift, crystal quality, anharmonic effect

中图分类号: (Vapor phase epitaxy; growth from vapor phase)

81.15.Kk

78.55.Cr (III-V semiconductors)

王党会, 许晟瑞, 郝跃, 张进成, 许天旱, 林志宇, 周昊, 薛晓咏 . Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering[J]. 中国物理B, 2013, 22(2): 28101-028101.

Wang Dang-Hui (王党会), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃), Zhang Jin-Cheng (张进成), Xu Tian-Han (许天旱), Lin Zhi-Yu (林志宇), Zhou Hao (周昊), Xue Xiao-Yong (薛晓咏 ). Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering[J]. Chin. Phys. B, 2013, 22(2): 28101-028101.

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Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

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