中国物理B ›› 2013, Vol. 22 ›› Issue (2): 24212-024212.doi: 10.1088/1674-1056/22/2/024212

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

High efficiency grating couplers based on shared process with CMOS MOSFETs

仇超a b c, 盛振a, 李乐b, 彭树根b, 武爱民a, 王曦a, 邹世昌a b, 甘甫烷a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;
    c University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2012-05-09 修回日期:2012-07-06 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 11ZR1443700); the Funds from the Science and Technology Commission of Shanghai Municipality, China (Grant Nos. 10DJ1400400 and 10706200500); and the National Natural Science Foundation of China (Grant No. 61106051).

High efficiency grating couplers based on shared process with CMOS MOSFETs

Qiu Chao (仇超)a b c, Sheng Zhen (盛振)a, Li Le (李乐)b, Albert Pang (彭树根)b, Wu Ai-Min (武爱民)a, Wang Xi (王曦)a, Zou Shi-Chang (邹世昌)a b, Gan Fu-Wan (甘甫烷)a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;
    c University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2012-05-09 Revised:2012-07-06 Online:2013-01-01 Published:2013-01-01
  • Contact: Sheng Zhen, Gan Fu-Wan E-mail:zsheng@mail.sim.ac.cn; fuwan@mail.sim.ac.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 11ZR1443700); the Funds from the Science and Technology Commission of Shanghai Municipality, China (Grant Nos. 10DJ1400400 and 10706200500); and the National Natural Science Foundation of China (Grant No. 61106051).

PDF (PC)

662

赞

摘要： Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal-oxide-semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as gate in CMOS metal-oxide-semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ～ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication.

关键词: grating coupler, optical waveguide, silicon-on-insulator, poly-silicon

Abstract: Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal-oxide-semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as gate in CMOS metal-oxide-semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ～ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication.

Key words: grating coupler, optical waveguide, silicon-on-insulator, poly-silicon

中图分类号:  (Integrated optics)

  • 42.82.-m
42.82.Et (Waveguides, couplers, and arrays)