Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

doi:10.1088/1674-1056/22/2/028502

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/22/2/028502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

马振洋, 柴常春, 任兴荣, 杨银堂, 赵颖博, 乔丽萍

School of Microelectronics, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2012-05-06 修回日期:2012-07-10 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 )

School of Microelectronics, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2012-05-06 Revised:2012-07-10 Online:2013-01-01 Published:2013-01-01
Contact: Ma Zhen-Yang E-mail:zyma@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

摘要/Abstract

摘要： In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.

关键词: bipolar transistor, high power microwave, pulse repetition frequency, duty cycle

Abstract: In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.

Key words: bipolar transistor, high power microwave, pulse repetition frequency, duty cycle

中图分类号: (Bipolar transistors)

85.30.Pq

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

马振洋, 柴常春, 任兴荣, 杨银堂, 赵颖博, 乔丽萍 . Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters[J]. Chin. Phys. B, 2013, 22(2): 28502-028502.

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 ). Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters[J]. Chin. Phys. B, 2013, 22(2): 28502-028502.

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Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

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