Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

doi:10.1088/1674-1056/22/2/029402

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 29402-029402.doi: 10.1088/1674-1056/22/2/029402

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

李达维, 秦军瑞, 陈书明

College of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2012-05-03 修回日期:2012-07-08 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Hunan Provincial Innovation Foundation for Postgraduate, China (Grant No. CX2011B026).

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明)

College of Computer, National University of Defense Technology, Changsha 410073, China

Received:2012-05-03 Revised:2012-07-08 Online:2013-01-01 Published:2013-01-01
Contact: Qin Jun-Rui E-mail:qinjr@nudt.edu.cn
Supported by:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Hunan Provincial Innovation Foundation for Postgraduate, China (Grant No. CX2011B026).

摘要/Abstract

摘要： Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.

关键词: single event upset, multi-node charge collection, recovery, ultra-low ower voltage

Abstract: Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.

Key words: single event upset, multi-node charge collection, recovery, ultra-low ower voltage

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

李达维, 秦军瑞, 陈书明. Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells[J]. 中国物理B, 2013, 22(2): 29402-029402.

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明). Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells[J]. Chin. Phys. B, 2013, 22(2): 29402-029402.

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Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

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