Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

doi:10.1088/1674-1056/22/2/027505

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27505-027505.doi: 10.1088/1674-1056/22/2/027505

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

王辉^{a b}, 严成锋^a, 孔海宽^a, 陈建军^a, 忻隽^a, 施尔畏^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2012-06-07 修回日期:2012-08-13 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10).

Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

Wang Hui (王辉)^{a b}, Yan Cheng-Feng (严成锋)^a, Kong Hai-Kuan (孔海宽)^a, Chen Jian-Jun (陈建军)^a, Xin Jun (忻隽)^a, Shi Er-Wei (施尔畏 )^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China

Received:2012-06-07 Revised:2012-08-13 Online:2013-01-01 Published:2013-01-01
Contact: Yan Cheng-Feng E-mail:pabol2006@163.com
Supported by:
Project supported by the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10).

摘要/Abstract

摘要： This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H-SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice. The Raman spectra reveale that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H-SiC are hardly varied. It is found that after V-doping process, the saturation magnetization (M_s) and the vacancy concentration of 6H-SiC are both increased. From these results, it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of M_s of V-doped 6H-SiC.

关键词: 6H-SiC, V-doping, ferromagnetism, vacancy concentration

Abstract: This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H-SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice. The Raman spectra reveale that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H-SiC are hardly varied. It is found that after V-doping process, the saturation magnetization (M_s) and the vacancy concentration of 6H-SiC are both increased. From these results, it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of M_s of V-doped 6H-SiC.

Key words: 6H-SiC, V-doping, ferromagnetism, vacancy concentration

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.40.-s (Critical-point effects, specific heats, short-range order) 75.30.Fv (Spin-density waves)

王辉, 严成锋, 孔海宽, 陈建军, 忻隽, 施尔畏 . Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder[J]. 中国物理B, 2013, 22(2): 27505-027505.

Wang Hui (王辉), Yan Cheng-Feng (严成锋), Kong Hai-Kuan (孔海宽), Chen Jian-Jun (陈建军), Xin Jun (忻隽), Shi Er-Wei (施尔畏 ). Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder[J]. Chin. Phys. B, 2013, 22(2): 27505-027505.

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Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

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