Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (2): 26803-026803.doi: 10.1088/1674-1056/22/2/026803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Optically pumped GaN/AlGaN quantum well intersubband terahertz laser

傅爱兵, 郝明瑞, 杨耀, 沈文忠, 刘惠春   

  1. Key Laboratory of Artificial Structures and Quantum Control (Minister of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China
  • 收稿日期:2012-07-02 修回日期:2012-08-22 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported in part by the National Major Basic Research Program of China (Grant No. 2011CB925603) and the Shanghai Municipal Major Basic Research Project (Grant No. 09DJ1400102).

Optically pumped GaN/AlGaN quantum well intersubband terahertz laser

Fu Ai-Bing (傅爱兵), Hao Ming-Rui (郝明瑞), Yang Yao (杨耀), Shen Wen-Zhong (沈文忠), Liu Hui-Chun (刘惠春)   

  1. Key Laboratory of Artificial Structures and Quantum Control (Minister of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2012-07-02 Revised:2012-08-22 Online:2013-01-01 Published:2013-01-01
  • Contact: Shen Wen-Zhong, Liu Hui-Chun E-mail:wzshen@sjtu.edu.cn; h.c.liu@sjtu.edu.cn
  • Supported by:
    Project supported in part by the National Major Basic Research Program of China (Grant No. 2011CB925603) and the Shanghai Municipal Major Basic Research Project (Grant No. 09DJ1400102).

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摘要： We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.

关键词: quantum well structure, intersubband terahertz laser, GaN

Abstract: We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.

Key words: quantum well structure, intersubband terahertz laser, GaN

中图分类号:  (Quantum wells)

  • 68.65.Fg
42.55.Px (Semiconductor lasers; laser diodes) 61.72.uj (III-V and II-VI semiconductors)