An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

doi:10.1088/1674-1056/22/2/026103

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26103-026103.doi: 10.1088/1674-1056/22/2/026103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

谢刚^{a b}, 汤岑^a, 汪涛^a, 郭清^a, 张波^c, 盛况^a, Wai Tung Ng^b

a College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
b The Edward S. Rogers Sr. Electrical and Computer Engineering Department, University of Toronto, Toronto, Ontario, Canada, M5S 1A1;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2012-08-16 修回日期:2012-09-10 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001) and the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468).

An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

Xie Gang (谢刚)^{a b}, Tang Cen (汤岑)^a, Wang Tao (汪涛)^a, Guo Qing (郭清)^a, Zhang Bo (张波)^c, Sheng Kuang (盛况)^a, Wai Tung Ng^b

a College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
b The Edward S. Rogers Sr. Electrical and Computer Engineering Department, University of Toronto, Toronto, Ontario, Canada, M5S 1A1;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2012-08-16 Revised:2012-09-10 Online:2013-01-01 Published:2013-01-01
Contact: Sheng Kuang E-mail:shengk@zju.edu.cn
Supported by:
Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001) and the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468).

摘要/Abstract

摘要： An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at V_GS=-5 V. In contrast, a similar sized HEMT with CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without field plate (no FP) and with optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.

关键词: AlGaN/GaN high-electron mobility transistor, air-bridge field plate, breakdown voltage, breakdown voltage temperature coefficient

Abstract: An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at V_GS=-5 V. In contrast, a similar sized HEMT with CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without field plate (no FP) and with optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.

Key words: AlGaN/GaN high-electron mobility transistor, air-bridge field plate, breakdown voltage, breakdown voltage temperature coefficient

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

51.50.+v (Electrical properties)

谢刚, 汤岑, 汪涛, 郭清, 张波, 盛况, Wai Tung Ng. An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient[J]. 中国物理B, 2013, 22(2): 26103-026103.

Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng. An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient[J]. Chin. Phys. B, 2013, 22(2): 26103-026103.

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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

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