Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

doi:10.1088/1674-1056/22/2/027805

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27805-027805.doi: 10.1088/1674-1056/22/2/027805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer

穆雪^a, 吴晓明^a, 华玉林^a, 焦志强^a, 申利莹^a, 苏跃举^a, 白娟娟^a, 毕文涛^a, 印寿根^a, 郑加金^b

a School of Materials Science and Engineering, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China;
b College of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

收稿日期:2012-05-16 修回日期:2012-09-06 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60676051); the Natural Science Foundation of Tianjin, China (Grant No. 10JCYBJC01100); the Scientific Developing Foundation of Tianjin Education Commission, China (Grant No. 2011ZD02); and the Jiangsu Natural Science Development Foundation for University, China (Grant No. 09KJB140006).

Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer

Mu Xue (穆雪)^a, Wu Xiao-Ming (吴晓明)^a, Hua Yu-Lin (华玉林)^a, Jiao Zhi-Qiang (焦志强)^a, Shen Li-Ying (申利莹)^a, Su Yue-Ju (苏跃举)^a, Bai Juan-Juan (白娟娟)^a, Bi Wen-Tao (毕文涛)^a, Yin Shou-Gen (印寿根)^a, Zheng Jia-Jin (郑加金 )^b

a School of Materials Science and Engineering, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China;
b College of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Received:2012-05-16 Revised:2012-09-06 Online:2013-01-01 Published:2013-01-01
Contact: Wu Xiao-Ming E-mail:wxm@mail.nankai.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60676051); the Natural Science Foundation of Tianjin, China (Grant No. 10JCYBJC01100); the Scientific Developing Foundation of Tianjin Education Commission, China (Grant No. 2011ZD02); and the Jiangsu Natural Science Development Foundation for University, China (Grant No. 09KJB140006).

摘要/Abstract

摘要： Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.

关键词: organic light-emitting devices, low driving voltage, multiple quantum wells, charge transfer complex

Abstract: Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.

Key words: organic light-emitting devices, low driving voltage, multiple quantum wells, charge transfer complex

中图分类号: (Electroluminescence)

78.60.Fi

85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))

穆雪, 吴晓明, 华玉林, 焦志强, 申利莹, 苏跃举, 白娟娟, 毕文涛, 印寿根, 郑加金 . Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer[J]. 中国物理B, 2013, 22(2): 27805-027805.

Mu Xue (穆雪), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Su Yue-Ju (苏跃举), Bai Juan-Juan (白娟娟), Bi Wen-Tao (毕文涛), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金 ). Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer[J]. Chin. Phys. B, 2013, 22(2): 27805-027805.

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Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer

Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer

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