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Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor[J]. 中国物理B, 2023, 32(3): 37302-037302. |
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Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films[J]. 中国物理B, 2023, 32(3): 38101-038101. |
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Qidi Ren(任启迪), Kang Lai(赖康), Jiahao Chen(陈家浩), Xiaoxiang Yu(余晓翔), and Jiayu Dai(戴佳钰). A novel monoclinic phase and electrically tunable magnetism of van der Waals layered magnet CrTe2[J]. 中国物理B, 2023, 32(2): 27201-027201. |
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Yunpeng Jia(贾云鹏), Zhengguo Liang(梁正国), Haolin Pan(潘昊霖), Qing Wang(王庆), Qiming Lv(吕崎鸣), Yifei Yan(严轶非), Feng Jin(金锋), Dazhi Hou(侯达之), Lingfei Wang(王凌飞), and Wenbin Wu(吴文彬). Bismuth doping enhanced tunability of strain-controlled magnetic anisotropy in epitaxial Y3Fe5O12(111) films[J]. 中国物理B, 2023, 32(2): 27501-027501. |
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Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices[J]. 中国物理B, 2023, 32(1): 18506-018506. |
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Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101. |
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Jianxiang Gao(高健翔), Kai Sun(孙凯), Hao Guo(郭浩), Zhengyao Li(李正耀), Jianlin Wang(王建林), Xiaobai Ma(马小柏), Xuedong Bai(白雪东), and Dongfeng Chen(陈东风). Designing a P2-type cathode material with Li in both Na and transition metal layers for Na-ion batteries[J]. 中国物理B, 2022, 31(9): 98201-098201. |
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Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal[J]. 中国物理B, 2022, 31(9): 97503-097503. |
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Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)†, and Mei-Ling Sun(孙美玲)‡. High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance[J]. 中国物理B, 2022, 31(9): 98103-098103. |
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Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB[J]. 中国物理B, 2022, 31(9): 98104-098104. |
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Zi-Jun Wang(王子君), Jia-Wen Li(李嘉文), Da-Yong Zhang(张大勇), Gen-Jie Yang(杨根杰), and Jun-Sheng Yu(于军胜). Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer[J]. 中国物理B, 2022, 31(8): 87802-087802. |
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Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘). Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric[J]. 中国物理B, 2022, 31(7): 77701-077701. |
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Qi-Yuan Li(李启远), Yang-Yang Lv(吕洋洋), Yong-Jie Xu(徐永杰), Li Zhu(朱立), Wei-Min Zhao(赵伟民), Yanbin Chen(陈延彬), and Shao-Chun Li(李绍春). Surface electron doping induced double gap opening in Td-WTe2[J]. 中国物理B, 2022, 31(6): 66802-066802. |
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Yan-Ling Xiong(熊艳翎), Jia-Qi Guan(关佳其), Rui-Feng Wang(汪瑞峰), Can-Li Song(宋灿立), Xu-Cun Ma(马旭村), and Qi-Kun Xue(薛其坤). Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(√30×√30)R30°[J]. 中国物理B, 2022, 31(6): 67401-067401. |
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D Ben Jemia, M Karyaoui, M A Wederni, A Bardaoui, M V Martinez-Huerta, M Amlouk, and R Chtourou. Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method[J]. 中国物理B, 2022, 31(5): 58201-058201. |