中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26102-026102.doi: 10.1088/1674-1056/22/2/026102
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
严启荣, 闫其昂, 石培培, 牛巧利, 李述体, 章勇
Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇)
摘要: Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current.
中图分类号: (III-V and II-VI semiconductors)