中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/22/2/027201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

石磊, 冯士维, 郭春生, 朱慧, 万宁   

  1. College of Electron Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2012-07-16 修回日期:2012-07-31 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported by the Key Science and Technology Foundation of Guangdong Province, China (Grant Nos. 2011A080801005 and 2010A080802001) and the Guiding Project on the Integration of Industry, Education and Research of Guangdong Province, China (Grant No. 00802440123641045); and the Strategic Emerging Industries, the Special Fund for LED Industry Projects of Guangdong Province, China (Grant No. 2012A080304003).

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁)   

  1. College of Electron Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2012-07-16 Revised:2012-07-31 Online:2013-01-01 Published:2013-01-01
  • Contact: Feng Shi-Wei E-mail:shwfeng@bjut.edu.cn
  • Supported by:
    Project supported by the Key Science and Technology Foundation of Guangdong Province, China (Grant Nos. 2011A080801005 and 2010A080802001) and the Guiding Project on the Integration of Industry, Education and Research of Guangdong Province, China (Grant No. 00802440123641045); and the Strategic Emerging Industries, the Special Fund for LED Industry Projects of Guangdong Province, China (Grant No. 2012A080304003).

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摘要： Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (RS/RD) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.

关键词: high-electron mobility transistor, surface state, trap, recovery

Abstract: Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (RS/RD) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.

Key words: high-electron mobility transistor, surface state, trap, recovery

中图分类号:  (Charge carriers: generation, recombination, lifetime, and trapping)

  • 72.20.Jv
73.61.Ey (III-V semiconductors) 73.20.At (Surface states, band structure, electron density of states)