Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

doi:10.1088/1674-1056/22/2/029401

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 29401-029401.doi: 10.1088/1674-1056/22/2/029401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇下一篇

Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

李达维, 秦军瑞, 陈书明

College of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2012-06-30 修回日期:2012-08-17 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Innovation Foundation for Postgraduate of Hunan Province, China (Grant No. CX2011B026).

Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明)

College of Computer, National University of Defense Technology, Changsha 410073, China

Received:2012-06-30 Revised:2012-08-17 Online:2013-01-01 Published:2013-01-01
Contact: Qin Jun-Rui E-mail:qinjr@nudt.edu.cn
Supported by:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Innovation Foundation for Postgraduate of Hunan Province, China (Grant No. CX2011B026).

摘要/Abstract

摘要： This paper investigates the temperature dependence of single event transient (SET) in 90-nm complementary metat-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55℃ to 125℃, which is closely correlated with the source of NMOSFETs. This reveals that the pulse width increases with temperature in dual-well due to the weakening of anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.

关键词: single event transient, temperature dependence dual-well, triple-well, N⁺ deep well

Abstract: This paper investigates the temperature dependence of single event transient (SET) in 90-nm complementary metat-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55℃ to 125℃, which is closely correlated with the source of NMOSFETs. This reveals that the pulse width increases with temperature in dual-well due to the weakening of anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.

Key words: single event transient, temperature dependence dual-well, triple-well, N⁺ deep well

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

李达维, 秦军瑞, 陈书明. Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs[J]. 中国物理B, 2013, 22(2): 29401-029401.

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明). Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs[J]. Chin. Phys. B, 2013, 22(2): 29401-029401.

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Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

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