Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (10): 108504    DOI: 10.1088/1674-1056/27/10/108504
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Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons
Hong Zhao(赵虹)1, Dan-Dan Peng(彭丹丹)1, Jun He(何军)1, Xin-Mei Li(李新梅)1, Meng-Qiu Long(龙孟秋)1,2
1 Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
2 Institute of Low-dimensional Quantum Materials and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China

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