Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC

doi:10.1088/1674-1056/27/4/046101

Abstract SiC monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences, and the effects of Pd ion implantation on wettability of Si/SiC and Al-12Si/SiC systems are investigated by the sessile drop technique. The decreases of contact angles of the two systems are disclosed after the ion implantation, which can be attributed to the increase of surface energy (σ_SV) of SiC substrate derived from high concentration of defects induced by the ion-implantation and to the decrease of solid-liquid surface energy (σ_SL) resulting from the increasing interfacial interactions. This study can provide guidance in improving the wettability of metals on SiC and the electronic packaging process of SiC substrate.

Keywords: ceramics defects surfaces ion implantation wettability

Received: 04 December 2017
Revised: 22 January 2018
Accepted manuscript online:

PACS:	61.72.U-	(Doping and impurity implantation)
	68.08.Bc	(Wetting)
	65.40.gp	(Surface energy)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572112 and 51172177), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20151340), the Six Talent Peaks Project of Jiangsu Province, China (Grant Nos. 2014-XCL-002 and TD-XCL-004), the Innovation/Entrepreneurship Program of Jiangsu Province, China (Grant No.[2015]26), and the Qing Lan Project of Jiangsu Province, China (Grant No.[2016]15).

Corresponding Authors: Gui-Wu Liu, Guan-Jun Qiao
E-mail: gwliu76@ujs.edu.cn;gjqiao@ujs.edu.cn

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Ting-Ting Wang(汪婷婷), Gui-Wu Liu(刘桂武), Zhi-Kun Huang(黄志坤), Xiang-Zhao Zhang(张相召), Zi-Wei Xu(徐紫巍), Guan-Jun Qiao(乔冠军) Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC 2018 Chin. Phys. B 27 046101

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Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC

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