Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (10): 108503    DOI: 10.1088/1674-1056/26/10/108503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Yan Zeng(曾严)1, Xiao-Jin Li(李小进)1, Jian Qing(卿健)1, Ya-Bin Sun(孙亚宾)1, Yan-Ling Shi(石艳玲)1, Ao Guo(郭奥)2, Shao-Jian Hu(胡少坚)2
1. Shanghai Key Laboratory of Multidimensional Information Processing and Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2. Shanghai Integrated Circuit Research & Development Center, Shanghai 201203, China

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