| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure |
| Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰) |
| Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology(NCNST), Beijing 100083, China |
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Abstract Flexible electrically pumped random laser (RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate (ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence (PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal-insulator-semiconductor (MIS) structure of Au/SiO2/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ~11.5 mA and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.
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Received: 07 April 2017
Revised: 10 April 2017
Accepted manuscript online:
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PACS:
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73.20.Mf
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(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
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78.67.Uh
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(Nanowires)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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Corresponding Authors:
Cao-Feng Pan
E-mail: cfpan@binn.cas.cn
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Cite this article:
Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰) Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure 2017 Chin. Phys. B 26 067301
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