Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

doi:10.1088/1674-1056/26/6/067301

Abstract

Flexible electrically pumped random laser (RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate (ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence (PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal-insulator-semiconductor (MIS) structure of Au/SiO₂/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ~11.5 mA and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.

Keywords: flexible random laser ZnO nanowires MIS structure

Received: 07 April 2017
Revised: 10 April 2017
Accepted manuscript online:

PACS:	73.20.Mf	(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
	78.67.Uh	(Nanowires)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Cao-Feng Pan
E-mail: cfpan@binn.cas.cn

Cite this article:

Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰) Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure 2017 Chin. Phys. B 26 067301

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Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure

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