High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

doi:10.1088/1674-1056/25/5/057304

Abstract High-performance Ge n⁺/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n⁺/p junction has a rectification ratio of 5.6×10⁴ and a forward current of 387 A/cm² at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.

Keywords: germanium metal-induced dopant activation NiGe n⁺/P junction

Received: 03 December 2015
Revised: 26 January 2016
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	61.72.uf	(Ge and Si)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

Corresponding Authors: Wei Huang
E-mail: weihuang@xmu.edu.cn

Cite this article:

Wei Huang(黄巍), Chao Lu(陆超), Jue Yu(余珏), Jiang-Bin Wei(魏江镔), Chao-Wen Chen(陈超文), Jian-Yuan Wang(汪建元), Jian-Fang Xu(徐剑芳), Chen Wang(王尘), Cheng Li(李成), Song-Yan Chen(陈松岩), Chun-Li Liu(刘春莉), Hong-Kai Lai(赖虹凯) High-performance germanium n⁺/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature 2016 Chin. Phys. B 25 057304

[1]	Satta A, Janssens T, Clarysse T, Simoen E, Meuris M, Benedetti A, Hoflijk I, Jaeger B De, Demeurisse C and Vandervorst W 2006 J. Vac. Sci. Technol. B 24 494
[2]	Shang H, Lee K L, Kozlowski P, D'Emic C, Babich I, Sikorski E, Ieong M, Wong H S P, Guarini K and Haensch W 2004 IEEE Electron Device Lett. 25 135
[3]	Park J H, Tada M, Jung W S, Wong H S P and Saraswat K C 2009 J. Appl. Phys. 106 074510
[4]	Nishimura T, Sakata S, Nagashio K, Kita K and Toriumi A 2009 Appl. Phys. Express 2 021202
[5]	Ioannou-Sougleridis V, Galata S F, Golias E, Speliotis T, Dimoulas A, Giubertoni D, Gennaro S and Barozzi M 2011 Microelectron. Eng. 88 254
[6]	Park J H, Kuzum D, Tada M and Saraswat K C 2008 Appl. Phys. Lett. 93 193507
[7]	Gaudeta S, Detavernier C, Kellock A J, Desjardins P and Lavoie C 2006 J. Vac. Sci. Technol. A 24 474
[8]	Simoen E, Opsomer K, Claeys C, Maex K, Detavernier C, Van Meirhaeghe R L, Forment S and Clauws P 2006 Appl. Phys. Lett. 88 183506
[9]	Mueller M, Zhao Q T, Urban C, Sandow C, Buca D, Lenk S, Estévez S and Mantl S 2008 Mater. Sci. Technol. B 154 168

[1]	Pressure-induced stable structures and physical properties of Sr-Ge system Shuai Han(韩帅), Shuai Duan(段帅), Yun-Xian Liu(刘云仙), Chao Wang(王超), Xin Chen(陈欣), Hai-Rui Sun(孙海瑞), and Xiao-Bing Liu(刘晓兵). Chin. Phys. B, 2023, 32(1): 016101.
[2]	Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.
[3]	High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode Zhiwei Huang(黄志伟), Shaoying Ke(柯少颖), Jinrong Zhou(周锦荣), Yimo Zhao(赵一默), Wei Huang(黄巍), Songyan Chen(陈松岩), and Cheng Li(李成). Chin. Phys. B, 2021, 30(3): 037303.
[4]	Micron-sized diamond particles containing Ge-V and Si-V color centers Hang-Cheng Zhang(章航程), Cheng-Ke Chen(陈成克), Ying-Shuang Mei(梅盈爽), Xiao Li(李晓), Mei-Yan Jiang(蒋梅燕), Xiao-Jun Hu(胡晓君). Chin. Phys. B, 2019, 28(7): 076103.
[5]	Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation Hui Guo(郭辉), Xueyan Wang(王雪艳), De-Liang Bao(包德亮), Hong-Liang Lu(路红亮), Yu-Yang Zhang(张余洋), Geng Li(李更), Ye-Liang Wang(王业亮), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2019, 28(7): 078103.
[6]	Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Chin. Phys. B, 2019, 28(7): 076106.
[7]	Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏). Chin. Phys. B, 2019, 28(6): 068503.
[8]	Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军). Chin. Phys. B, 2018, 27(1): 018502.
[9]	An investigation of ionizing radiation damage in different SiGe processes Pei Li(李培), Mo-Han Liu(刘默寒), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Jin-Xin Zhang(张晋新), Ting Ma(马婷). Chin. Phys. B, 2017, 26(8): 088503.
[10]	Properties of n-Ge epilayer on Si substrate with in-situ doping technology Shi-Hao Huang(黄诗浩), Cheng Li(李成), Cheng-Zhao Chen(陈城钊), Chen Wang(王尘), Wen-Ming Xie(谢文明), Shu-Yi Lin(林抒毅), Ming Shao(邵明), Ming-Xing Nie(聂明星), Cai-Yun Chen(陈彩云). Chin. Phys. B, 2016, 25(6): 066601.
[11]	High-speed waveguide-integrated Ge/Si avalanche photodetector Hui Cong(丛慧), Chunlai Xue(薛春来), Zhi Liu(刘智), Chuanbo Li(李传波), Buwen Cheng(步成文), Qiming Wang(王启明). Chin. Phys. B, 2016, 25(5): 058503.
[12]	Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉). Chin. Phys. B, 2015, 24(7): 077306.
[13]	Understanding many-body physics in one dimension from the Lieb-Liniger model Jiang Yu-Zhu (姜玉铸), Chen Yang-Yang (陈洋洋), Guan Xi-Wen (管习文). Chin. Phys. B, 2015, 24(5): 050311.
[14]	Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment Zheng Xiao-Hu (郑晓虎), Zhang Miao (张苗), Huang An-Ping (黄安平), Xiao Zhi-Song (肖志松), Paul K Chu (朱剑豪), Wang Xi (王曦), Di Zeng-Feng (狄增峰). Chin. Phys. B, 2015, 24(5): 056801.
[15]	High performance silicon waveguide germanium photodetector Li Chong (李冲), Xue Chun-Lai (薛春来), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明). Chin. Phys. B, 2015, 24(3): 038502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Cite this article:

Online attention

High-performance germanium n⁺/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature