Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (5): 057304    DOI: 10.1088/1674-1056/25/5/057304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
Wei Huang(黄巍)1, Chao Lu(陆超)1, Jue Yu(余珏)1, Jiang-Bin Wei(魏江镔)1, Chao-Wen Chen(陈超文)1, Jian-Yuan Wang(汪建元)1, Jian-Fang Xu(徐剑芳)1, Chen Wang(王尘)2, Cheng Li(李成)1, Song-Yan Chen(陈松岩)1, Chun-Li Liu(刘春莉)3, Hong-Kai Lai(赖虹凯)1
1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
2. Xiamen University of Technology, Xiamen 361005, China;
3. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 449-791, Korea

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