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Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation |
Chen Wang(王尘)1, Yihong Xu(许怡红)2, Cheng Li(李成)3, Haijun Lin(林海军)1 |
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China; 2 Xiamen Institute of Technology, Xiamen 361024, China; 3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China |
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Abstract A method to improve Ge n+/p junction diode performance by excimer laser annealing (ELA) and epitaxial Si passivation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n+/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5×106 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n+/p diode are beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.
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Received: 28 June 2017
Revised: 22 September 2017
Accepted manuscript online:
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PACS:
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85.30.Kk
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(Junction diodes)
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81.65.Rv
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(Passivation)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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Fund: Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant No. YKJ16012R). |
Corresponding Authors:
Chen Wang
E-mail: chenwang@xmut.edu.cn
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Cite this article:
Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军) Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation 2018 Chin. Phys. B 27 018502
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