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Chin. Phys. B, 2018, Vol. 27(1): 018502    DOI: 10.1088/1674-1056/27/1/018502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation

Chen Wang(王尘)1, Yihong Xu(许怡红)2, Cheng Li(李成)3, Haijun Lin(林海军)1
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Abstract  A method to improve Ge n+/p junction diode performance by excimer laser annealing (ELA) and epitaxial Si passivation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n+/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5×106 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n+/p diode are beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.
Keywords:  epitaxial Si passivation      excimer laser annealing      Ge n+/p junction  
Received:  28 June 2017      Revised:  22 September 2017      Accepted manuscript online: 
PACS:  85.30.Kk (Junction diodes)  
  81.65.Rv (Passivation)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Fund: Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant No. YKJ16012R).
Corresponding Authors:  Chen Wang     E-mail:  chenwang@xmut.edu.cn

Cite this article: 

Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军) Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation 2018 Chin. Phys. B 27 018502

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