Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

doi:10.1088/1674-1056/24/11/116401

Abstract We investigate the carrier behavior of HgTe under high pressures up to 23 GPa using in situ Hall effect measurements. As the phase transitions from zinc blende to cinnabar, then to rock salt, and finally to Cmcm occur, all the parameters change discontinuously. The conductivity variation under compression is described by the carrier parameters. For the zinc blende phase, both the decrease of carrier concentration and the increase of mobility indicate the overlapped valence band and conduction band separates with pressure. Pressure causes an increase in the hole concentration of HgTe in the cinnabar phase, which leads to the carrier-type inversion and the lowest mobility at 5.6 GPa. In the phase transition process from zinc blende to rock salt, Te atoms are the major ones in atomic movements in the pressure regions of 1.0-1.5 GPa and 1.8-3.1 GPa, whereas Hg atoms are the major ones in the pressure regions of 1.5-1.8 GPa and 3.1-7.7 GPa. The polar optical scattering of the rock salt phase decreases with pressure.

Keywords: electrical properties phase transitions transport properties scattering mechanism

Received: 17 May 2015
Revised: 08 July 2015
Accepted manuscript online:

PACS:	64.60.-i	(General studies of phase transitions)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB808204), the National Natural Science Foundation of China (Grant Nos. 11374121, 51441006, and 51479220), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11404137), the Program for the Development of Science and Technology of Jilin province, China (Grant Nos. 201201079 and 201215222), the Twentieth Five-Year Program for Science and Technology of Education Department of Jilin Province, China (Grant No. 0520306), and the Open Project Program of State Key Laboratory of Superhard Materials of China (Grant No. 201208).

Corresponding Authors: Cui Xiao-Yan, Gao Chun-Xiao
E-mail: xycuimail@163.com;cxgao599@aliyun.com

Cite this article:

Hu Ting-Jing (胡廷静), Cui Xiao-Yan (崔晓岩), Li Xue-Fei (李雪飞), Wang Jing-Shu (王婧姝), Lü Xiu-Mei (吕秀梅), Wang Ling-Sheng (王棱升), Yang Jing-Hai (杨景海), Gao Chun-Xiao (高春晓) Carrier behavior of HgTe under high pressure revealed by Hall effect measurement 2015 Chin. Phys. B 24 116401

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Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

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