Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

doi:10.1088/1674-1056/24/3/037303

Abstract

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.

Keywords: GeOI metal-oxide-semiconductor field-effect transistor fringing capacitance subthreshold swing threshold voltage

Received: 28 June 2014
Revised: 13 October 2014
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.-r	(Electrical properties of specific thin films)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61274112).

Corresponding Authors: Xu Jing-Ping
E-mail: jpxu@mail.hust.edu.cn

Cite this article:

Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor 2015 Chin. Phys. B 24 037303

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

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