Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (8): 087804    DOI: 10.1088/1674-1056/23/8/087804
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Current Issue| Next Issue| Archive| Adv Search |
Thermal effect of Ge2Sb2Te5 in phase change memory device
Li Jun-Taoa b, Liu Boa, Song Zhi-Tanga, Ren Kuna b, Zhu Mina b, Xu Jiac, Ren Jia-Dongc, Feng Gao-Mingc, Ren Wan-Chunc, Tong Haoc
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, Shanghai 201203, China

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