Thermal effect of Ge2Sb2Te5 in phase change memory device

doi:10.1088/1674-1056/23/8/087804

Abstract In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge₂Sb₂Te₅ (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge₂Sb₂Te₅ and substrate in the initial open memory cell. This lower region of Ge₂Sb₂Te₅ is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.

Keywords: phase change memory Ge₂Sb₂Te₅ thermal effect failure analysis

Received: 04 September 2013
Revised: 21 March 2014
Accepted manuscript online:

PACS:	78.66.Jg	(Amorphous semiconductors; glasses)
	68.35.Np	(Adhesion)
	68.35.Ct	(Interface structure and roughness)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), and the Funds from the Science and Technology Council of Shanghai, China (Grant No. 12nm0503701).

Corresponding Authors: Liu Bo
E-mail: liubo@mail.sim.ac.cn

Cite this article:

Li Jun-Tao (李俊焘), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Ren Kun (任堃), Zhu Min (朱敏), Xu Jia (徐佳), Ren Jia-Dong (任佳栋), Feng Gao-Ming (冯高明), Ren Wan-Chun (任万春), Tong Hao (童浩) Thermal effect of Ge₂Sb₂Te₅ in phase change memory device 2014 Chin. Phys. B 23 087804

[1]	Lankhorst M H R, Ketelaars B W S M M and Wolters R A M 2005 Nat. Mater. 4 347
[2]	Liu B, Song Z T, Zhang T, Feng S L and Chen B 2004 Chin. Phys. 13 1947
[3]	Pedersen T P L, Kalb J, Njoroge W K, Wamwangi D, Wuttig M and Spaepen F 2001 Appl. Phys. Lett. 79 3597
[4]	Hong S H and Lee H 2008 Jpn. J. Appl. Phys. 47 3372
[5]	Shin S, Kim K M, Song J, Kim H K, Choi D J and Cho H H 2011 IEEE Trans. Electron Dev. 58 782
[6]	Krusin-Elbaum L, Cabral C, Chen K N, Copel M, Abraham D W, Reuter K B, Rossnagel S M, Bruley J and Deline V R 2007 Appl. Phys. Lett. 90 141902
[7]	Njoroge W K, Woltgens H W and Wuttig M 2002 J. Vac. Sci. Technol. A 20 230
[8]	Park I M, Jung J K, Ryu S O, Choi K J, Yu B G, Park Y B, Han S M and Joo Y C 2008 Thin Solid Films 517 848
[9]	Reifenberg J P, Kencke D L and Goodson K E 2008 IEEE Electron Dev. Lett. 29 1112
[10]	Kojima R, Okabayashi S, Kashihara T, Horai K, Matsunaga T, Ohno E, Yamada N and Ohta T 1998 Jpn. J. Appl. Phys. 37 2098
[11]	Seo H, Jeong T H, Park J W, Yeon C, Kim S J and Kim S Y 2000 Jpn. J. Appl. Phys. 39 745
[12]	Cheng L M, Wu L C, Song Z T, Rao F, Peng C, Yao D N and Liu B 2012 Mat. Lett. 71 98
[13]	Park I M, Cho J Y, Yang T Y, Park E S and Joo Y C 2011 Jpn. J. Appl. Phys. 50 061201
[14]	Liu B, Song Z T, Zhang T, Xia J L, Feng S L and Chen B 2005 Thin Solid Films 478 49

[1]	High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors Xiao-Juan Lian(连晓娟), Jin-Ke Fu(付金科), Zhi-Xuan Gao(高志瑄),Shi-Pu Gu(顾世浦), and Lei Wang(王磊). Chin. Phys. B, 2023, 32(1): 017304.
[2]	Terahertz radiation generation by beating of two chirped laser pulses in a warm collisional magnetized plasma Motahareh Arefnia, Mehdi Sharifian, and Mohammad Ghorbanalilu. Chin. Phys. B, 2021, 30(9): 094101.
[3]	Quantifying plasmon resonance and interband transition contributions in photocatalysis of gold nanoparticle Liang Dong(董亮), Chengyun Zhang(张成云), Lei Yan(严蕾), Baobao Zhang(张宝宝), Huan Chen(陈环), Xiaohu Mi(弥小虎), Zhengkun Fu(付正坤), Zhenglong Zhang(张正龙), and Hairong Zheng(郑海荣). Chin. Phys. B, 2021, 30(7): 077301.
[4]	Failure analysis with a focus on thermal aspect towards developing safer Na-ion batteries Yuqi Li(李钰琦), Yaxiang Lu(陆雅翔), Liquan Chen(陈立泉), Yong-Sheng Hu(胡勇胜). Chin. Phys. B, 2020, 29(4): 048201.
[5]	Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪). Chin. Phys. B, 2019, 28(9): 098502.
[6]	Non-thermal effects of 0.1 THz radiation on intestinal alkaline phosphatase activity and conformation Xin-Xin Zhang(张欣欣), Ming-Xia He(何明霞), Yu Chen(陈宇), Cheng Li(李程), Jin-Wu Zhao(赵晋武), Peng-Fei Wang(王鹏騛), Xin Peng(彭鑫). Chin. Phys. B, 2019, 28(12): 128702.
[7]	Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064μm Si-Hang Wei(魏思航), Ben Ma(马奔), Ze-Sheng Chen(陈泽升), Yong-Ping Liao(廖永平), Hong-Yue Hao(郝宏玥), Yu Zhang(张宇), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2017, 26(7): 074208.
[8]	Design and performance of a composite Tm: YAG laser pumped by VBG-stabilized narrow-band laser diode Shu-Tao Dai(戴殊韬), Jian-Hong Huang(黄见洪), Hai-Zhou Huang(黄海舟), Li-Xia Wu(吴丽霞), Jin-Hui Li(李锦辉), Jing Deng(邓晶), Yan Ge(葛燕), Wen-Xiong Lin(林文雄). Chin. Phys. B, 2017, 26(7): 074211.
[9]	Influence of low temperature on the surface deformation of deformable mirrors Juncheng You(尤俊成), Chunlin Guan(官春林), Hong Zhou(周虹). Chin. Phys. B, 2017, 26(5): 054215.
[10]	Thermal effect on endurance performance of 3-dimensional RRAM crossbar array Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明). Chin. Phys. B, 2016, 25(5): 056501.
[11]	Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser Song Yan-Rong (宋晏蓉), Guoyu He-Yang (郭于鹤洋), Zhang Peng (张鹏), Tian Jin-Rong (田金荣). Chin. Phys. B, 2015, 24(8): 084208.
[12]	Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦). Chin. Phys. B, 2015, 24(5): 057702.
[13]	Analytical model for thermal lensing and spherical aberration in diode side-pumped Nd:YAG laser rod having Gaussian pump profile M H Moghtader Dindarlu, M Kavosh Tehrani, H Saghafifar, A Maleki. Chin. Phys. B, 2015, 24(12): 124205.
[14]	Phase transformation in Mg–Sb₃Te thin films Li Jun-Jian (李军建), Wang Guo-Xiang (王国祥), Chen Yi-Min (陈益敏), Shen Xiang (沈祥), Nie Qiu-Hua (聂秋华), Lü Ye-Gang (吕业刚), Dai Shi-Xun (戴世勋), Xu Tie-Feng (徐铁锋). Chin. Phys. B, 2014, 23(8): 087301.
[15]	Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry He Ao-Dong (何敖东), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Wang Liang-Yong (王良咏), Liu Wei-Li (刘卫丽), Feng Gao-Ming (冯高明), Feng Song-Lin (封松林). Chin. Phys. B, 2014, 23(8): 088502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Thermal effect of Ge2Sb2Te5 in phase change memory device

Cite this article:

Online attention

Thermal effect of Ge₂Sb₂Te₅ in phase change memory device