Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/22/11/117307

Abstract In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V_BR is saturated at 1085 V for gate–drain spacing L_GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L_GD=10 μm. For the length of the drain FP L_DF ≤ 2 μm, V_BR is almost kept at 1085 V, showing no degradation. When L_DF exceeds 2 μm, V_BR decreases obviously as L_DF increases. Moreover, the larger the L_DF, the larger the decrease of V_BR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L_GD at which V_BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V_BR.

Keywords: AlGaN/GaN high electron mobility transistor forward blocking voltage drain field plate

Received: 26 March 2013
Revised: 22 April 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant No. 61204085).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

Cite this article:

Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor 2013 Chin. Phys. B 22 117307

[1]	Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G and Khan M A 2006 IEEE Electron. Device Lett. 27 716
[2]	Selvaraj S L, Suzue T and Egawa T 2009 IEEE Electron. Device Lett. 30 587
[3]	Oka T and Nozawa T 2008 IEEE Electron. Device Lett. 29 668
[4]	Mao W, Yang C, Hao Y, Zhang J C, Liu H X, Bi Z W, Xu S R, Xue J S, Ma X H, Wang C, Yang L A, Zhang J F and Kuang X W 2011 Chin. Phys. B 20 017203
[5]	Yang L, Hu G Z, Hao Y, Ma X H, Quan S, Yang L Y and Jiang S G 2010 Chin. Phys. B 19 047301
[6]	Guo L L, Feng Q, Hao Y and Yang Y 2007 Acta Phys. Sin. 56 2895 (in Chinese)
[7]	Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I, Ogura T and Ohashi H 2003 IEEE Trans. Electron. Devices 50 2528
[8]	Dora Y, Chakraborty A, McCarthy L, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron. Device Lett. 27 713
[9]	Xing H L, Dora Y, Chini A, Heikman S, Keller S and Mishra U K 2004 IEEE Electron. Device Lett. 25 161
[10]	Treidel E B, Lossy R, Würfl J and Tränkle G 2009 IEEE Electron. Device Lett. 30 901
[11]	Zhao S L, Zhang H L, Zhang K, Luo J, Ma X H and Hao Y 2013 IEEE Trans. Electron. Devices (submitted for publication)
[12]	Kunihiro K, Kasahara K, Takahashi Y and Ohno Y 1999 IEEE Electron. Device Lett. 20 608
[13]	Karmalkar S and Mishra U K 2001 IEEE Trans. Electron. Devices 48 1515

[1]	Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃). Chin. Phys. B, 2016, 25(1): 017303.
[2]	Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(9): 097305.
[3]	Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(10): 107303.
[4]	Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇). Chin. Phys. B, 2014, 23(1): 017303.
[5]	Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) . Chin. Phys. B, 2012, 21(7): 077304.
[6]	Neutron irradiation effects on AlGaN/GaN high electron mobility transistors LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) . Chin. Phys. B, 2012, 21(3): 037104.
[7]	Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun . Chin. Phys. B, 2011, 20(3): 036106.
[8]	High temperature characteristics of AlGaN/GaN high electron mobility transistors Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) . Chin. Phys. B, 2011, 20(11): 117302.
[9]	Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高). Chin. Phys. B, 2010, 19(4): 047301.
[10]	Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣). Chin. Phys. B, 2010, 19(10): 107305.
[11]	High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华). Chin. Phys. B, 2009, 18(4): 1601-1608.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Cite this article:

Online attention