Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric

doi:10.1088/1674-1056/19/10/107305

Abstract The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-$\kappa$ organic dielectrics are investigated. The maximum drain current I_{D max} and the maximum transconductance g_{m max} of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V_T and g_{m max} of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-$\kappa$ organic dielectric.

Keywords: AlGaN/GaN high electron mobility transistor electrical property organic dielectric

Received: 26 January 2010
Revised: 10 May 2010
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	77.22.Ch	(Permittivity (dielectric function))
	77.55.+f
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50932002), the Youth Foundation (Grant No. L08010301JX0805) and Start-up Foundation of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China (Grant No. A09010301GG-01).

Cite this article:

Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric 2010 Chin. Phys. B 19 107305

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Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric

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