Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

doi:10.1088/1674-1056/22/6/067701

Abstract Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al₂O₃/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.

Keywords: Al₂O₃ gate dielectric ozone post oxidation equivalent oxide thickness electrical properties

Received: 15 September 2012
Revised: 19 December 2012
Accepted manuscript online:

PACS:	77.55.D-
	61.72.uf	(Ge and Si)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	68.47.Fg	(Semiconductor surfaces)

Fund: Project supported by the National Program on Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048), the National Science and Technology Major Projects (Grant No. 2009ZX02035), the State Key Laboratory of ASIC and System Project (Grant No. 11MS017), and the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001).

Corresponding Authors: Lu Hong-Liang, Zhao Yi
E-mail: honglianglu@fudan.edu.cn; yzhao@nju.edu.cn

Cite this article:

Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅) Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation 2013 Chin. Phys. B 22 067701

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Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

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Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation