Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (6): 067701    DOI: 10.1088/1674-1056/22/6/067701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
Sun Jia-Baoa b, Yang Zhou-Weia, Geng Yangb, Lu Hong-Liangb, Wu Wang-Rana, Ye Xiang-Donga, David Zhang Weib, Shi Yia, Zhao Yia c
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

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