High efficiency grating couplers based on shared process with CMOS MOSFETs

doi:10.1088/1674-1056/22/2/024212

Abstract Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal-oxide-semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as gate in CMOS metal-oxide-semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ～ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication.

Keywords: grating coupler optical waveguide silicon-on-insulator poly-silicon

Received: 09 May 2012
Revised: 06 July 2012
Accepted manuscript online:

PACS:	42.82.-m	(Integrated optics)
	42.82.Et	(Waveguides, couplers, and arrays)

Fund: Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 11ZR1443700); the Funds from the Science and Technology Commission of Shanghai Municipality, China (Grant Nos. 10DJ1400400 and 10706200500); and the National Natural Science Foundation of China (Grant No. 61106051).

Corresponding Authors: Sheng Zhen, Gan Fu-Wan
E-mail: zsheng@mail.sim.ac.cn; fuwan@mail.sim.ac.cn

Cite this article:

Qiu Chao (仇超), Sheng Zhen (盛振), Li Le (李乐), Albert Pang (彭树根), Wu Ai-Min (武爱民), Wang Xi (王曦), Zou Shi-Chang (邹世昌), Gan Fu-Wan (甘甫烷) High efficiency grating couplers based on shared process with CMOS MOSFETs 2013 Chin. Phys. B 22 024212

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