Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric

doi:10.1088/1674-1056/21/8/087701

Abstract Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.

Keywords: 4H-SiC Al₂O₃ high-k dielectric

Received: 10 February 2012
Revised: 22 February 2012
Accepted manuscript online:

PACS:	77.22.Jp	(Dielectric breakdown and space-charge effects)
	73.20.-r	(Electron states at surfaces and interfaces)
	77.84.Lf	(Composite materials)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006060 and 61176070).

Corresponding Authors: Tang Xiao-Yan
E-mail: xytang@mail.xidian.edu.cn

Cite this article:

Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang (吕红亮), Wang Yue-Hu (王悦湖 ) Investigation of 4H–SiC metal–insulation–semiconductor structure with Al₂O₃/SiO₂ stacked dielectric 2012 Chin. Phys. B 21 087701

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Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric

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Investigation of 4H–SiC metal–insulation–semiconductor structure with Al₂O₃/SiO₂ stacked dielectric