Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

doi:10.1088/1674-1056/20/3/037501

Abstract This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co²⁺ and Ga³⁺ ions substitute for Zn²⁺ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Keywords: diluted magnetic semiconductors (Ga, Co)-codoped ZnO anomalous Hall effect magnetroresisance

Received: 21 May 2010
Revised: 09 October 2010
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)
	75.70.Tj	(Spin-orbit effects)
	78.70.Dm	(X-ray absorption spectra)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

Cite this article:

Liu Xue-Chao(刘学超), Chen Zhi-Zhan(陈之战), Shi Er-Wei(施尔畏), Liao Da-Qian(廖达前), and Zhou Ke-Jin(周克谨) Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films 2011 Chin. Phys. B 20 037501

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Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

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