Total ionizing dose effect in an input/output device for flash memory

doi:10.1088/1674-1056/20/12/120703

Abstract Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Keywords: input/output device oxide trapped charge radiation induced narrow channel effect shallow trench isolation total ionizing dose

Received: 03 May 2011
Revised: 22 June 2011
Accepted manuscript online:

PACS:	07.87.+v	(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
	85.30.-z	(Semiconductor devices)

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Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) Total ionizing dose effect in an input/output device for flash memory 2011 Chin. Phys. B 20 120703

[1]	Saks N S, Ancona M G and Modolo J A 1984 IEEE Trans. Nucl. Sci. NS-31 1249
[2]	Saks N S, Ancona M G and Modolo J A 1986 IEEE Trans. Nucl. Sci. NS-33 1185
[3]	Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[4]	Esqueda I S, Barnaby H J and Alles M L 2005 IEEE Trans. Nucl. Sci. 52 2259
[5]	Barnaby H J, Mclain M and Esqueda I S 2007 Nucl. Instrum. Methods Phys. Res. Sect. B 261 1142
[6]	Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, Mclain M and Schrimpf R D 2008 Microelectron. Reliab. 48 1000
[7]	Nguyen D N, Lee C I and Johnston A H 1998 IEEE Radiation Effects Data Workshop Record Newport Beach, CA, USA p. 100
[8]	Nguyen D N, Guertin S M, Swift G M and Johnston A H 1999 IEEE Trans. Nucl. Sci. 46 1744
[9]	Mclain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H, Amort A, Baze M and Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10]	Faccio F and Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[11]	Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L and Ranieri A 2007 Nucl. Instrum. Methods Phys. Res. Sect. A 582 750
[12]	Li D M, Wang Z H, Huangfu L Y and Gou Q J 2007 Chin. Phys. 16 3760
[13]	Wang S H, Lu Q, Wang W H, An X and Huang R 2010 Acta Phys. Sin. 59 1970 (in Chinese)
[14]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Chin. Phys. B 20 070701
[15]	Arora N 2007 Mosfet Modeling for VLSI Simulation: Theory and Practice (Singapore: World Scientific) pp. 84-86
[16]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2010 Nucl. Instrum. Methods Phys. Res. Sect. B 268 3498
[17]	Youk G U, Khare P S, Schrimpf R D, Massengill L W and Galloway K F 1999 IEEE Trans. Nucl. Sci. 46 1830
[18]	Deen M J and Yan Z X 1990 IEEE Trans. Electron. Dev. 37 1707
[19]	Davis G E and Hughes H L 1982 IEEE Trans. Nucl. Sci. 29 1685
[20]	Neamen D A 2003 Semiconductor Physics and Devices: Basic Principles 3rd edn. (New York: McGraw-Hill) pp. 499, 500

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Total ionizing dose effect in an input/output device for flash memory

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