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Chin. Phys. B, 2011, Vol. 20(12): 120702    DOI: 10.1088/1674-1056/20/12/120702
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Impact of substrate bias on radiation-induced edge effects in MOSFETs

Hu Zhi-Yuan(胡志远)a)b)†,Liu Zhang-Li(刘张李)a)b), Shao-Hua(邵华)a),Zhang Zheng-Xuan(张正选)a), Ning Bing-Xu(宁冰旭)a)b), Chen Ming(陈明)a)b), Bi Da-Wei(毕大炜)a),and Zou Shi-Chang(邹世昌)a)
a Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Abstract  This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.
Keywords:  ionizing radiation      shallow trench isolation      trapped charge      total dose effects  
Received:  19 April 2011      Revised:  21 June 2011      Accepted manuscript online: 
PACS:  07.80.+b  
  24.50.+g (Direct reactions)  

Cite this article: 

Hu Zhi-Yuan(胡志远), Liu Zhang-Li(刘张李), Shao-Hua(邵华), Zhang Zheng-Xuan(张正选), Ning Bing-Xu(宁冰旭), Chen Ming(陈明), Bi Da-Wei(毕大炜), and Zou Shi-Chang(邹世昌) Impact of substrate bias on radiation-induced edge effects in MOSFETs 2011 Chin. Phys. B 20 120702

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