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Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs |
Chen Jian-Jun(陈建军)†, Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) |
School of Computer Science, National University of Defense Technology, Changsha 410073, China |
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Abstract Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose (TID) effect. However, their capability of resisting the hot carrier effect (HCE) has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers (the annular source nMOSFETs) are also studied to provide a possible alternative for the designers.
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Received: 11 May 2011
Revised: 26 May 2011
Accepted manuscript online:
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PACS:
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42.88.+h
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(Environmental and radiation effects on optical elements, devices, and systems)
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85.30.Tv
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(Field effect devices)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the
National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025). |
Cite this article:
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs 2011 Chin. Phys. B 20 114220
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[1] |
Xue S B, Huang R, Huang D T, Wang S H, Tan F, Wang J, An X and Zhang X 2010 Chin. Phys. B 19 117307
|
[2] |
Dodd P E, Shaneyfelt M R, Schwank J R and Felix J A 2010 IEEE Tran. Nucl. Sci. 57 1747
|
[3] |
Cao Y R, Ma X H, Hao Y and Hu S G 2010 Chin. Phys. B 19 473
|
[4] |
Cao Y R, Hao Y, Ma X H and Hu S G 2009 Chin. Phys. B 18 309
|
[5] |
Liu A Y, Du L and Bao J L 2008 Acta Phys. Sin. 57 2468 (in Chinese)
|
[6] |
Silvestri M, Gerardin S, Paccagnella A, Faccio F and Gonella L 2008 IEEE Trans. Nucl. Sci. 55 1960
|
[7] |
Kufluoglu H and Alam M A 2004 IEDM Technical Digest, December 13-15, 2004, San Francisco, America, p. 113
|
[8] |
Saha D, Varghese D and Mahapatra S 2006 IEEE Electron. Dev. Lett. 27 188
|
[9] |
Silvestri M, Gerardin S, Paccagnella A and Faccio F 2008 IEEE Trans. Nucl. Sci. 55 3216
|
[10] |
Schwank J R, Shaneyfelt M R, Fleetwood D M, James A, Dodd P E, Paillet P and Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
|
[11] |
Küflüoglu H and Alam M A 2007 IEEE Trans. Electron. Dev. 54 1101
|
[12] |
Kumar P B, Dalei T R, Varghese D, Saha D, Mahapatra S and Alam M A 2005 Proceedings of the IRPS, April 17-21, 2005, Califomia, America, p. 700
|
[13] |
Mahapatra S, Saha D, Varghese D and Kumar P B 2006 IEEE Trans. Electron. Dev. 531583
|
[14] |
Saha D, Varghese D and Mahapatra S 2006 IEEE Electron. Dev. Lett. 27 585
|
[15] |
Pagey M P, Schrimpf R D, Galloway K F, Nicklaw C J, Ikeda S and Kamohara S 2001 IEEE Electron. Dev. Lett. 22 290
|
[16] |
Vogel E M, Edelstein M D and Suehle J S 2001 Microelectron. Engin. 59 73
|
[17] |
Tang M C, Fang Y K, Liao W S, Chen D, Yeh C S and Hcien S H 2008 IEEE Trans. Electron. Dev. 55 1541
|
[18] |
Takeda E, Shimizu A and Hagiwara T 1983 IEEE Electron. Dev. Lett. 4 329
|
[19] |
Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
|
[20] |
Liu B W, Chen S M, Liang B and Liu Z 2009 IEEE Trans. Nucl. Sci. 56 2473
|
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