Formation of high density TiN nanocrystals and its application in non-volatile memories
Li Xue-Lin(李学林)a)c)†,Feng Shun-Shan(冯顺山)b), and Chen Guo-Guang(陈国光)a)
aNorth University of China, Taiyuan 030051, China; bBeijing Institute of Technology, Beijing 100081, China; c Shandong Machinery (Group) Co. Ltd, Zibo 255201, China
Abstract Non-volatile memory based on TiN nanocrystal (TiN--NC) charge storage nodes embedded in SiO$_{2}$ has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN--NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5 nm is confirmed by transmission electron microscopy and x-ray diffraction. x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiN$_{x}$O$_{y}$/SiON oxide between TiN--NC and SiO$_{2}$, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5 V and an endurance cycle throughout 10$^{5}$. Its charging mechanism, which is interpreted from the analysis of programming speed (d$V_{\rm th}$/d$t$) and the gate leakage versus voltage characteristics ($I_{\rm g}$ vs $V_{\rm g})$, has been explained by direct tunnelling for tunnel oxide and Fowler--Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler--Nordheim tunnelling for both the oxides at programming voltages higher than 9 V.
Received: 08 May 2007
Revised: 13 September 2007
Accepted manuscript online:
Li Xue-Lin(李学林), Feng Shun-Shan(冯顺山), and Chen Guo-Guang(陈国光) Formation of high density TiN nanocrystals and its application in non-volatile memories 2008 Chin. Phys. B 17 1070
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