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CN 11-5639/O4
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Other articles related with "85.35.-p":
97304 Yanhui Hou, Teng Zhang, Jiatao Sun, Liwei Liu, Yugui Yao, Yeliang Wang
  Progress on 2D topological insulators and potential applications in electronic devices
    Chin. Phys. B   2020 Vol.29 (9): 97304-097304 [Abstract] (103) [HTML 1 KB] [PDF 3178 KB] (140)
48505 Bin-Bin Yang, Nuo Xu, Er-Rui Zhou, Zhi-Wei Li, Cheng Li, Pin-Yun Yi, Liang Fang
  A method of generating random bits by using electronic bipolar memristor
    Chin. Phys. B   2020 Vol.29 (4): 48505-048505 [Abstract] (57) [HTML 1 KB] [PDF 1063 KB] (66)
28502 Hai-Jun Liu, Chang-Lin Chen, Xi Zhu, Sheng-Yang Sun, Qing-Jiang Li, Zhi-Wei Li
  Memristor-based vector neural network architecture
    Chin. Phys. B   2020 Vol.29 (2): 28502-028502 [Abstract] (90) [HTML 1 KB] [PDF 568 KB] (73)
108503 Yong-Chen Xiong, Zhan-Wu Zhu, Ze-Dong He
  Phase transition and charge transport through a triple dot device beyond the Kondo regime
    Chin. Phys. B   2018 Vol.27 (10): 108503-108503 [Abstract] (126) [HTML 1 KB] [PDF 400 KB] (145)
108504 Hong Zhao, Dan-Dan Peng, Jun He, Xin-Mei Li, Meng-Qiu Long
  Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons
    Chin. Phys. B   2018 Vol.27 (10): 108504-108504 [Abstract] (178) [HTML 1 KB] [PDF 1350 KB] (123)
87701 Shi-Jian Wu, Fang Wang, Zhi-Chao Zhang, Yi Li, Ye-Mei Han, Zheng-Chun Yang, Jin-Shi Zhao, Kai-Liang Zhang
  High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer
    Chin. Phys. B   2018 Vol.27 (8): 87701-087701 [Abstract] (262) [HTML 1 KB] [PDF 2296 KB] (121)
118501 Nan Shao, Sheng-Bing Zhang, Shu-Yuan Shao
  A phenomenological memristor model for synaptic memory and learning behaviors
    Chin. Phys. B   2017 Vol.26 (11): 118501-118501 [Abstract] (228) [HTML 0 KB] [PDF 380 KB] (191)
118502 Errui Zhou, Liang Fang, Rulin Liu, Zhenseng Tang
  An improved memristor model for brain-inspired computing
    Chin. Phys. B   2017 Vol.26 (11): 118502-118502 [Abstract] (309) [HTML 0 KB] [PDF 482 KB] (210)
97102 Yong-Chen Xiong, Jun Zhang, Wang-Huai Zhou, Amel Laref
  Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device
    Chin. Phys. B   2017 Vol.26 (9): 97102-097102 [Abstract] (169) [HTML 1 KB] [PDF 308 KB] (227)
18504 Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
  Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
    Chin. Phys. B   2017 Vol.26 (1): 18504-018504 [Abstract] (180) [HTML 1 KB] [PDF 329 KB] (429)
118504 Libin Liu, Renrong Liang, Bolin Shan, Jun Xu, Jing Wang
  Technology demonstration of a novel poly-Si nanowire thin film transistor
    Chin. Phys. B   2016 Vol.25 (11): 118504-118504 [Abstract] (127) [HTML 1 KB] [PDF 1232 KB] (704)
107302 Shuai Su, Xiao-Chuan Jian, Fang Wang, Ye-Mei Han, Yu-Xian Tian, Xiao-Yang Wang, Hong-Zhi Zhang, Kai-Liang Zhang
  Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
    Chin. Phys. B   2016 Vol.25 (10): 107302-107302 [Abstract] (226) [HTML 1 KB] [PDF 1458 KB] (254)
58502 Xiao-Ping Wang, Lin Chen, Yi Shen, Bo-Wen Xu
  A novel circuit design for complementary resistive switch-based stateful logic operations
    Chin. Phys. B   2016 Vol.25 (5): 58502-058502 [Abstract] (252) [HTML 1 KB] [PDF 829 KB] (373)
38502 Yan-hui Xin, Sheng Yuan, Ming-tang Liu, Hong-xia Liu, He-cai Yuan
  Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs
    Chin. Phys. B   2016 Vol.25 (3): 38502-038502 [Abstract] (192) [HTML 1 KB] [PDF 339 KB] (275)
118501 Liu Chang-Bai, He Ying, Wang Sheng-Lei
  Excellent ethanol sensing properties based on Er2O3-Fe2O3 nanotubes
    Chin. Phys. B   2015 Vol.24 (11): 118501-118501 [Abstract] (218) [HTML 1 KB] [PDF 1659 KB] (287)
88401 Wang Xiao-Ping, Chen Min, Shen Yi
  Switching mechanism for TiO2 memristor and quantitative analysis of exponential model parameters
    Chin. Phys. B   2015 Vol.24 (8): 88401-088401 [Abstract] (231) [HTML 1 KB] [PDF 618 KB] (530)
73101 Dai Yue-Hua, Chen Zhen, Jin Bo, Li Ning, Li Xiao-Feng
  Optimal migration path of Ag in HfO2: A first-principles study
    Chin. Phys. B   2015 Vol.24 (7): 73101-073101 [Abstract] (172) [HTML 1 KB] [PDF 1468 KB] (601)
47302 Morteza Charmi
  Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs
    Chin. Phys. B   2015 Vol.24 (4): 47302-047302 [Abstract] (212) [HTML 0 KB] [PDF 412 KB] (367)
18503 Liu Chang-Bai, Liu Xing-Yi, Wang Sheng-Lei
  Excellent acetone sensing properties of porous ZnO
    Chin. Phys. B   2015 Vol.24 (1): 18503-018503 [Abstract] (210) [HTML 0 KB] [PDF 457 KB] (337)
118402 Liu Hai-Jun, Li Zhi-Wei, Yu Hong-Qi, Sun Zhao-Lin, Nie Hong-Shan
  Memristance controlling approach based on modification of linear M-q curve
    Chin. Phys. B   2014 Vol.23 (11): 118402-118402 [Abstract] (188) [HTML 1 KB] [PDF 416 KB] (472)
107306 Deng Ning, Pang Hua, Wu Wei
  Effects of different dopants on switching behavior of HfO2-based resistive random access memory
    Chin. Phys. B   2014 Vol.23 (10): 107306-107306 [Abstract] (124) [HTML 1 KB] [PDF 953 KB] (2057)
68401 Tian Xiao-Bo, Xu Hui
  Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier
    Chin. Phys. B   2014 Vol.23 (6): 68401-068401 [Abstract] (131) [HTML 1 KB] [PDF 2390 KB] (1060)
48401 Liu Hai-Jun, Li Zhi-Wei, Bu Kai, Sun Zhao-Lin, Nie Hong-Shan
  Computation of the locus crossing point location of MC circuit
    Chin. Phys. B   2014 Vol.23 (4): 48401-048401 [Abstract] (159) [HTML 1 KB] [PDF 310 KB] (359)
18504 Musarrat Jabeen, Muhammad Azhar Iqbal, R Vasant Kumar, Mansoor Ahmed, Muhammad Tayyeb Javed
  Chemical synthesis of zinc oxide nanorods for enhanced hydrogen gas sensing
    Chin. Phys. B   2014 Vol.23 (1): 18504-018504 [Abstract] (179) [HTML 1 KB] [PDF 488 KB] (1713)
116801 Gao Zhi-Xiang, Wang Hua, Hao Yu-Ying, Miao Yan-Qin, Xu Bing-She
  Improved light extraction of organic light emitting diodes with a nanopillar pattering structure
    Chin. Phys. B   2013 Vol.22 (11): 116801-116801 [Abstract] (182) [HTML 1 KB] [PDF 3307 KB] (578)
117304 Li Gui-Qin, Guo Yong
  Coupling strength effect on shot noise in boron devices
    Chin. Phys. B   2013 Vol.22 (11): 117304-117304 [Abstract] (172) [HTML 1 KB] [PDF 621 KB] (305)
87303 Hou Hai-Ping, Xie Yue-E, Chen Yuan-Ping, Ouyang Tao, Ge Qing-Xia, Zhong Jian-Xin
  Spin gapless armchair graphene nanoribbons under magnetic field and uniaxial strain
    Chin. Phys. B   2013 Vol.22 (8): 87303-087303 [Abstract] (287) [HTML 1 KB] [PDF 654 KB] (630)
88501 Tian Xiao-Bo, Xu Hui
  The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis
    Chin. Phys. B   2013 Vol.22 (8): 88501-088501 [Abstract] (277) [HTML 1 KB] [PDF 929 KB] (1399)
88502 Tian Xiao-Bo, Xu Hui, Li Qing-Jiang
  The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier
    Chin. Phys. B   2013 Vol.22 (8): 88502-088502 [Abstract] (210) [HTML 1 KB] [PDF 907 KB] (781)
78901 Fang Xu-Dong, Tang Yu-Hua, Wu Jun-Jie, Zhu Xuan, Zhou Jing, Huang Da
  SPICE modeling of flux-controlled unipolar memristive devices
    Chin. Phys. B   2013 Vol.22 (7): 78901-078901 [Abstract] (271) [HTML 1 KB] [PDF 508 KB] (669)
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