Chin. Phys. B
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Chin. Phys.  2006, Vol. 15 Issue (10): 2422-2426    DOI: 10.1088/1009-1963/15/10/039
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
Yang Fu-Huaa, Ma Longb, Wang Liang-Chenb, Huang Ying-Longc, Zhang Yangd
a Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of; b Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; d Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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