1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS
Liang Jian-jun (梁建军)abc, Chen Wei-de (陈维德)abc, Wang Yong-qian (王永谦)abc, Chang Yong (常勇)c, Wang Zhan-guo (王占国)a
a Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China c State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.
Received: 02 February 2000
Revised: 25 April 2000
Accepted manuscript online:
Fund: Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).
Cite this article:
Liang Jian-jun (梁建军), Chen Wei-de (陈维德), Wang Yong-qian (王永谦), Chang Yong (常勇), Wang Zhan-guo (王占国) 1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS 2000 Chinese Physics 9 783
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