DOPING BEHAVIOR AND ELECTRICAL ACTIVATION OF CARBON IN GaAs

doi:10.1088/1004-423X/4/7/007

Abstract

Abstract Heavily C-doped GaAs films, grown by metalorganic chemical vapor deposition with CCl₄ as external carbon source, have been studied by Hall-effect measurements, high-resolution double-crystal X-ray diffraction, and secondary-ion-mass spectroscopy (SIMS). Comparison among X-ray diffraction and Hall-effect measurements and SIMS results indicates that carbon is preferentially incorporated as acceptor on As lattice sites and electrical activation rate achieves 100%. There is no evidence of carbon incorporated on Ga sites as donors and incorporated on interstitial lattice sites.

Received: 27 September 1994
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	73.61.Ey	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.72.uj	(III-V and II-VI semiconductors)
	72.20.My	(Galvanomagnetic and other magnetotransport effects)
	61.72.J-	(Point defects and defect clusters)

Fund: Project supported by the Electronic Science Foundation of Ministry of Electronics Industry.

Cite this article:

YAN BEI-PING (严北平), LUO JIN-SHENG (罗晋生), ZHANG QI-LIN (章其麟) DOPING BEHAVIOR AND ELECTRICAL ACTIVATION OF CARBON IN GaAs 1995 Acta Physica Sinica (Overseas Edition) 4 531

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DOPING BEHAVIOR AND ELECTRICAL ACTIVATION OF CARBON IN GaAs

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