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CN 11-5639/O4
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Other articles related with "61.72.uj":
96701 He Guan, Cheng-Yu Jiang, Shao-Xi Wang
  Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor
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76102 Xing-Yi Tan, Li-Li Liu, Da-Hua Ren
  Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain
    Chin. Phys. B   2020 Vol.29 (7): 76102-076102 [Abstract] (39) [HTML 1 KB] [PDF 5238 KB] (47)
58504 Chao-Jun Wang, Xun Yang, Jin-Hao Zang, Yan-Cheng Chen, Chao-Nan Lin, Zhong-Xia Liu, Chong-Xin Shan
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    Chin. Phys. B   2020 Vol.29 (5): 58504-058504 [Abstract] (65) [HTML 1 KB] [PDF 1576 KB] (81)
46104 Shao Li, Gang Li, Li-Shuang Yang, Kui-Ying Li
  Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO2 thin film
    Chin. Phys. B   2020 Vol.29 (4): 46104-046104 [Abstract] (54) [HTML 1 KB] [PDF 1871 KB] (60)
26104 Yu-Min Zhang, Jian-Feng Wang, De-Min Cai, Guo-Qiang Ren, Yu Xu, Ming-Yue Wang, Xiao-Jian Hu, Ke Xu
  Growth and doping of bulk GaN by hydride vapor phase epitaxy
    Chin. Phys. B   2020 Vol.29 (2): 26104-026104 [Abstract] (157) [HTML 1 KB] [PDF 3570 KB] (169)
116107 Ji Zhang, De-Ming Zhang
  First-principles study of oxygen adsorbed on Au-doped RuO2 (110) surface
    Chin. Phys. B   2019 Vol.28 (11): 116107-116107 [Abstract] (73) [HTML 1 KB] [PDF 1446 KB] (81)
86104 Dahua Ren, Xingyi Tan, Teng Zhang, Yuan Zhang
  Electronic and optical properties of GaN-MoS2 heterostructure from first-principles calculations
    Chin. Phys. B   2019 Vol.28 (8): 86104-086104 [Abstract] (205) [HTML 1 KB] [PDF 901 KB] (205)
86105 Xue-Fei Liu, Zi-Jiang Luo, Xun Zhou, Jie-Min Wei, Yi Wang, Xiang Guo, Bing Lv, Zhao Ding
  Structural, mechanical, and electronic properties of 25 kinds of Ⅲ-V binary monolayers:A computational study with first-principles calculation
    Chin. Phys. B   2019 Vol.28 (8): 86105-086105 [Abstract] (113) [HTML 1 KB] [PDF 3949 KB] (202)
86106 Jingxiu Yang, Su-Huai Wei
  First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell
    Chin. Phys. B   2019 Vol.28 (8): 86106-086106 [Abstract] (346) [HTML 1 KB] [PDF 526 KB] (217)
60701 Kang Liu, Jiwen Zhao, Huarui Sun, Huaixin Guo, Bing Dai, Jiaqi Zhu
  Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
    Chin. Phys. B   2019 Vol.28 (6): 60701-060701 [Abstract] (175) [HTML 1 KB] [PDF 952 KB] (154)
56102 Qi-Yun Xie, Min Wu, Li-Min Chen, Gang Bai, Wen-Qin Zou, Wei Wang, Liang He
  Crystallographic and magnetic properties of van der Waals layered FePS3 crystal
    Chin. Phys. B   2019 Vol.28 (5): 56102-056102 [Abstract] (128) [HTML 1 KB] [PDF 1154 KB] (245)
28502 Ming-sheng Xu, Lei Ge, Ming-ming Han, Jing Huang, Hua-yong Xu, Zai-xing Yang
  Recent advances in Ga-based solar-blind photodetectors
    Chin. Phys. B   2019 Vol.28 (2): 28502-028502 [Abstract] (321) [HTML 1 KB] [PDF 4881 KB] (266)
18103 Z K Zhang, W W Pan, J L Liu, W Lei
  A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
    Chin. Phys. B   2019 Vol.28 (1): 18103-018103 [Abstract] (226) [HTML 1 KB] [PDF 5470 KB] (214)
126101 You Wu, Xiao-Juan Sun, Yu-Ping Jia, Da-Bing Li
  Review of improved spectral response of ultraviolet photodetectors by surface plasmon
    Chin. Phys. B   2018 Vol.27 (12): 126101-126101 [Abstract] (208) [HTML 1 KB] [PDF 7462 KB] (209)
106102 Yan-Jun Ji, Jun-Ping Wang, You-Wen Liu
  Effects of Al component content on optoelectronic properties of AlxGa1-xN
    Chin. Phys. B   2018 Vol.27 (10): 106102-106102 [Abstract] (140) [HTML 1 KB] [PDF 961 KB] (144)
86102 Jun-Lian Chen, Neena Devi, Na Li, De-Jun Fu, Xian-Wen Ke
  Synthesis of Pr-doped ZnO nanoparticles: Their structural, optical, and photocatalytic properties
    Chin. Phys. B   2018 Vol.27 (8): 86102-086102 [Abstract] (164) [HTML 1 KB] [PDF 1078 KB] (220)
16102 Zhao-Jun Mo, Zhi-Hong Hao, Xiao-Jie Ping, Li-Na Kong, Hui Yang, Jia-Lin Cheng, Jun-Kai Zhang, Yong-Hao Jin, Lan Li
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86103 A R Degheidy, E B Elkenany
  Electronic, optical, and mechanical properties of BN, AlN, and InN with zinc-blende structure under pressure
    Chin. Phys. B   2017 Vol.26 (8): 86103-086103 [Abstract] (209) [HTML 1 KB] [PDF 507 KB] (223)
76104 M Shakil, Muhammad Zafar, Shabbir Ahmed, Muhammad Raza-ur-rehman Hashmi, M A Choudhary, T Iqbal
  Theoretical calculations of structural, electronic, and elastic properties of CdSe1-xTex: A first principles study
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76105 Dong-hua Li, Hui-Qiong Wang, Hua Zhou, Ya-Ping Li, Zheng Huang, Jin-Cheng Zheng, Jia-Ou Wang, Hai-jie Qian, Kurash Ibrahim, Xiaohang Chen, Huahan Zhan, Yinghui Zhou, Junyong Kang
  Influence of nitrogen and magnesium doping on the properties of ZnO films
    Chin. Phys. B   2016 Vol.25 (7): 76105-076105 [Abstract] (189) [HTML 1 KB] [PDF 752 KB] (837)
78502 Yu Zhao, Bingfeng Fan, Yiting Chen, Yi Zhuo, Zhoujun Pang, Zhen Liu, Gang Wang
  Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
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66105 Zhi-Yuan Gao, Xiao-Wei Xue, Jiang-Jiang Li, Xun Wang, Yan-Hui Xing, Bi-Feng Cui, De-Shu Zou
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66106 Yu-Quan Su, Ming-Ming Chen, Long-Xing Su, Yuan Zhu, Zi-Kang Tang
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48105 Dong-Yue Han, Hui-Jie Li, Gui-Juan Zhao, Hong-Yuan Wei, Shao-Yan Yang, Lian-Shan Wang
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126701 Guan He, Lv Hong-Liang, Guo Hui, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
  Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses
    Chin. Phys. B   2015 Vol.24 (12): 126701-126701 [Abstract] (165) [HTML 1 KB] [PDF 305 KB] (372)
116803 Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang
  Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer
    Chin. Phys. B   2015 Vol.24 (11): 116803-116803 [Abstract] (312) [HTML 1 KB] [PDF 315 KB] (691)
96103 Yang Yi-Bin, Liu Ming-Gang, Chen Wei-Jie, Han Xiao-Biao, Chen Jie, Lin Xiu-Qi, Lin Jia-Li, Luo Hui, Liao Qiang, Zang Wen-Jie, Chen Yin-Song, Qiu Yun-Ling, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun
  In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system
    Chin. Phys. B   2015 Vol.24 (9): 96103-096103 [Abstract] (285) [HTML 1 KB] [PDF 527 KB] (548)
96804 Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang, Zhang Li-Qun, Liu Jian-Ping, Zhang Shu-Ming, Yang Hui
  Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
    Chin. Phys. B   2015 Vol.24 (9): 96804-096804 [Abstract] (224) [HTML 1 KB] [PDF 330 KB] (304)
76105 S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan
  Subthreshold behavior of AlInSb/InSb high electron mobility transistors
    Chin. Phys. B   2015 Vol.24 (7): 76105-076105 [Abstract] (173) [HTML 1 KB] [PDF 244 KB] (469)
76106 Muhammad Zafar, Shabbir Ahmed, M. Shakil, M. A. Choudhary, K. Mahmood
  Theoretical investigation of sulfur defects on structural, electronic, and elastic properties of ZnSe semiconductor
    Chin. Phys. B   2015 Vol.24 (7): 76106-076106 [Abstract] (256) [HTML 1 KB] [PDF 553 KB] (561)
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