High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

doi:10.1088/1674-1056/ac6162

Abstract A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.

Keywords: inverted trapezoidal epitaxial cross-section structure doubler Schottky barrier diode (SBD) GaAs terahertz capacitance modulation ratio

Received: 07 February 2022
Revised: 22 March 2022
Accepted manuscript online: 28 March 2022

PACS:	73.61.Ey	(III-V semiconductors)
	42.65.Ky	(Frequency conversion; harmonic generation, including higher-order harmonic generation)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Kk	(Junction diodes)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61871072).

Corresponding Authors: Yong Zhang, Jingtao Zhou
E-mail: yongzhang@uestc.edu.cn;zhoujingtao@ime.ac.cn

Cite this article:

Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波) High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure 2023 Chin. Phys. B 32 017305

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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

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