Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

doi:10.1088/1674-1056/22/10/106804

Abstract The photoluminescence (PL) characteristics of hybrid β-FeSi₂/Si and pure β-FeSi₂ films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi₂/Si film is longer than that in the pure β-FeSi₂ film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi₂.

Keywords: β-FeSi₂ nanocrystal photoluminescence resonant charge transfer

Received: 18 April 2013
Revised: 13 June 2013
Accepted manuscript online:

PACS:	68.65.Hb	(Quantum dots (patterned in quantum wells))
	78.55.-m	(Photoluminescence, properties and materials)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922102 and 2013CB932901), the National Natural Science Foundation of China (Grant No. 60976063), and the Priority Academic Program Development (PAPD) of Higher Education Institutions of Jiangsu Province and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) (Grant Nos. CityU 112510 and CityU 112212).

Corresponding Authors: Wu Xing-Long
E-mail: hkxlwu@nju.edu.cn

Cite this article:

He Jiu-Yang (何久洋), Zhang Qi-Zhen (张祺桢), Wu Xing-Long (吴兴龙), Chu Paul K. (朱剑豪) Resonant energy transfer from nanocrystal Si to β-FeSi₂ in hybrid Si/β-FeSi₂ film 2013 Chin. Phys. B 22 106804

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Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

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Resonant energy transfer from nanocrystal Si to β-FeSi₂ in hybrid Si/β-FeSi₂ film