INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers |
Ni Yi-Qiang, He Zhi-Yuan, Zhong Jian, Yao Yao, Yang Fan, Xiang Peng, Zhang Bai-Jun, Liu Yang |
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China |
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Abstract The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.
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Received: 22 December 2012
Revised: 04 February 2013
Published: 27 June 2013
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB923200), the National "863" Project of China (Grant No. 2011AA03A101), the Foundation of the Key Technologies R & D Program of Guangdong Province, China (Grant No. 2007A010500011), the International Science and Technology Cooperation Program of China (Grant No. 2012DFG52260), and the National Science Foundation of China-Guangdong Province Jointed Foundation (Grant No. U0834001). |
Corresponding Authors:
Liu Yang
E-mail: liuy69@mail.sysu.edu.cn
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Cite this article:
Ni Yi-Qiang, He Zhi-Yuan, Zhong Jian, Yao Yao, Yang Fan, Xiang Peng, Zhang Bai-Jun, Liu Yang Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers 2013 Chin. Phys. B 22 088104
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