Abstract The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.
Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB923200), the National "863" Project of China (Grant No. 2011AA03A101), the Foundation of the Key Technologies R & D Program of Guangdong Province, China (Grant No. 2007A010500011), the International Science and Technology Cooperation Program of China (Grant No. 2012DFG52260), and the National Science Foundation of China-Guangdong Province Jointed Foundation (Grant No. U0834001).
Corresponding Authors:
Liu Yang
E-mail: liuy69@mail.sysu.edu.cn
Cite this article:
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers 2013 Chin. Phys. B 22 088104
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