Electronic structures of impurities and point defects in semiconductors

doi:10.1088/1674-1056/27/11/117103

Abstract

A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for “shallow” and “deep” impurities and point defects. The underlying physics of computational results using different density-functional theory-based approaches are discussed and interpreted in the framework of the bound exciton model.

Keywords: semiconductor shallow impurity deep impurity bound exciton density-functional theory effective-mass theory hydrogen model

Received: 12 July 2018
Revised: 04 September 2018
Accepted manuscript online:

PACS:	71.55.-i	(Impurity and defect levels)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	78.20.-e	(Optical properties of bulk materials and thin films)

Corresponding Authors: Yong Zhang
E-mail: yong.zhang@uncc.edu

Cite this article:

Yong Zhang(张勇) Electronic structures of impurities and point defects in semiconductors 2018 Chin. Phys. B 27 117103

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