Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

doi:10.1088/1674-1056/25/11/117304

Abstract Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_0.45Ga_0.55N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N₂ gas at 400℃. The reverse leakage current density of Al_0.45Ga_0.55N Schottky diode was reduced by 2 orders of magnitude at -10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.

Keywords: plasma treatment reverse leakage current surface states

Received: 09 May 2016
Revised: 15 August 2016
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Corresponding Authors: Zhixin Qin
E-mail: zxqin@pku.edu.cn

Cite this article:

Fang Liu(刘芳), Zhixin Qin(秦志新) Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact 2016 Chin. Phys. B 25 117304

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Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

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