Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

doi:10.1088/1674-1056/24/1/017302

Abstract

In order to investigate the influence of compressive strain on indium incorporation in InAlN and InGaN ternary nitrides, InAlN/GaN heterostructures and InGaN films were grown by metal-organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by GaN buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the InGaN films, compressive strains are changed by employing AlGaN templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both InAlN and InGaN. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in InGaN ternary alloys.

Keywords: compressive strain indium incorporation InAlN InGaN

Received: 26 June 2014
Revised: 27 August 2014
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	79.60.Jv	(Interfaces; heterostructures; nanostructures)
	78.70.Ck	(X-ray scattering)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61404099 and 61306017) and the Fundamental Research Funds for the Central Universities, China (Grant No. JB141101).

Corresponding Authors: Zhang Jin-Cheng
E-mail: jchzhang@xidian.edu.cn

Cite this article:

Zhao Yi (赵一), Zhang Jin-Cheng (张进成), Xue Jun-Shuai (薛军帅), Zhou Xiao-Wei (周小伟), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃) Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys 2015 Chin. Phys. B 24 017302

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Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

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