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Chin. Phys. B, 2020, Vol. 29(8): 087302    DOI: 10.1088/1674-1056/ab9284
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Optical absorption in asymmetrical Gaussian potential quantum dot under the application of an electric field

Xue-Chao Li(李学超), Chun-Bao Ye(叶纯宝), Juan Gao(高娟), Bing Wang(王兵)
Optoelectronics Physics, Anhui University of Science and Technology, Huainan 232001, China
Abstract  We theoretically investigate the optical absorption coefficient (OAC) in asymmetrical Gaussian potential quantum dots subject to an applied electric field. Confined wave functions together with energies of electron energies in an effective mass approximation framework are obtained. The OAC is expressed according to the iterative method and the compact-density-matrix approach. Based on our results, OAC is sensitively dependent on external electric field together with the incident optical intensity. Additionally, peak shifts into greater energy as the quantum dot radius decrease. Moreover, the parameters of Gaussian potential have a significant influence on the OAC.
Keywords:  electric field      optical absorption      quantum dot  
Received:  23 February 2020      Revised:  13 April 2020      Accepted manuscript online: 
PACS:  73.21.La (Quantum dots)  
  94.20.Ss (Electric fields; current system)  
  33.80.-b (Photon interactions with molecules)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51702003, 61775087, and 11674312), the Provincial Foundation for Excellent Top Talents of Colleges and Universities of Anhui Province of China (Grant No. gxgwfx2019016), the Anhui Provincial Natural Science Foundation, China (Grant Nos. 1808085ME130 and 1508085QF140), University Outstanding Young Talents Support Program Fund (Grant No. gxyqZD2018039).
Corresponding Authors:  Chun-Bao Ye     E-mail:  cbyeaust@163.com

Cite this article: 

Xue-Chao Li(李学超), Chun-Bao Ye(叶纯宝), Juan Gao(高娟), Bing Wang(王兵) Optical absorption in asymmetrical Gaussian potential quantum dot under the application of an electric field 2020 Chin. Phys. B 29 087302

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