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Chin. Phys. B, 2018, Vol. 27(4): 048503    DOI: 10.1088/1674-1056/27/4/048503

Research on the radiation hardened SOI devices with single-step Si ion implantation

Li-Hua Dai(戴丽华)1,2, Da-Wei Bi(毕大炜)2, Zhi-Yuan Hu(胡志远)2, Xiao-Nian Liu(刘小年)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)2, Shi-Chang Zou(邹世昌)2
1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal-oxide-semiconductor transistor (CMOS) process is used to harden the SOI wafer. The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods. The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly. The metastable electron traps introduced by Si implantation is also investigated by electrical stress. The results show that these traps are very instable, and electrons will tunnel into or out of the metastable electron traps quickly after hot-electron-injection or hot-hole-injection.

Keywords:  silicon-on-insulator      total ionizing dose      Si ion implantation      metastable electron traps  
Received:  07 November 2017      Revised:  22 December 2017      Published:  05 April 2018
PACS:  85.30.Tv (Field effect devices)  
  61.80.Ed (γ-ray effects)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Corresponding Authors:  Li-Hua Dai     E-mail:

Cite this article: 

Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) Research on the radiation hardened SOI devices with single-step Si ion implantation 2018 Chin. Phys. B 27 048503

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