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Chin. Phys. B, 2017, Vol. 26(8): 087311    DOI: 10.1088/1674-1056/26/8/087311
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

Yangfeng Li(李阳锋)1,2, Yang Jiang(江洋)1,2, Junhui Die(迭俊珲)1,2, Caiwei Wang(王彩玮)1,2, Shen Yan(严珅)1,2, Ziguang Ma(马紫光)1,2, Haiyan Wu(吴海燕)1,2, Lu Wang(王禄)1,2, Haiqiang Jia(贾海强)1,2, Wenxin Wang(王文新)1,2, Hong Chen(陈弘)1,2
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  

The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.

Keywords:  InGaN      novel quantum wells      light-emitting diodes      electroluminescence  
Received:  19 June 2017      Revised:  29 June 2017      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  73.21.Fg (Quantum wells)  
  78.60.Fi (Electroluminescence)  
Fund: 

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400300 and 2016YFB0400600), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission (Grant No. Z151100003515001).

Corresponding Authors:  Hong Chen     E-mail:  hchen@iphy.ac.cn
About author:  0.1088/1674-1056/26/8/

Cite this article: 

Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure 2017 Chin. Phys. B 26 087311

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