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Chin. Phys. B, 2016, Vol. 25(7): 078107    DOI: 10.1088/1674-1056/25/7/078107
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Hexagonal boron nitride hollow capsules with collapsed surfaces: Chemical vapor deposition with single-source precursor ammonium fluoroborate

Xiaopeng Li(李肖鹏)1, Jun Zhang(张军)1, Chao Yu(郁超)1, Xiaoxi Liu(刘晓喜)1, Saleem Abbas1, Jie Li(李杰)1, Yanming Xue(薛彦明)2, Chengchun Tang(唐成春)1
1 School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
2 World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Abstract  

SBA-15 (mesoporous SiO2) is used to stabilize and transfer F- in the NH4BF4 CVD reaction for the first time, and a large-scale crystalline h-BN phase can be prepared. We successfully fabricate hollow h-BN capsules with collapsed surfaces in our designed NH4BF4 CVD system. Optimum temperature conditions are obtained, and a detailed formation mechanism is further proposed. The successful SBA-15-assisted NH4BF4 CVD route is of importance and enriches the engineering technology in the h-BN single-source CVD reaction.

Keywords:  hollow capsule      hexagonal boron nitride      chemical vapor deposition      ammonium fluoroborate  
Received:  10 January 2016      Revised:  25 February 2016      Accepted manuscript online: 
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  81.05.Je (Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.30.Hv (Other nonmetallic inorganics)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 51332005, 51372066, 51172060, 51202055, and 21103056).

Corresponding Authors:  Yanming Xue, Chengchun Tang     E-mail:  XUE.Yanming@nims.go.jp;tangcc@hebut.edu.cn

Cite this article: 

Xiaopeng Li(李肖鹏), Jun Zhang(张军), Chao Yu(郁超), Xiaoxi Liu(刘晓喜), Saleem Abbas, Jie Li(李杰), Yanming Xue(薛彦明), Chengchun Tang(唐成春) Hexagonal boron nitride hollow capsules with collapsed surfaces: Chemical vapor deposition with single-source precursor ammonium fluoroborate 2016 Chin. Phys. B 25 078107

[1] Corso M, Auwärter W, Muntwiler M, Tamai A and Greber T 2004 Science 303 217
[2] Tang C C, Bando Y, Huang Y, Zhi C Y and Golberg D 2008 Adv. Funct. Mater. 18 3653
[3] Liu M X, Zhang Y F and Liu Z F 2015 Acta Phys. Sin. 64 078101 (in Chinese)
[4] Shi Y M, Hamsen C, Jia X T, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H N, Juang Z Y, Dresselhaus M S, Li L J and Kong J 2010 Nano Lett. 10 4134
[5] Kim K K, Hsu A, Jia X T, Kim S M, Shi Y M, Hofmann M, Nezich D, Nieva J F R, Dresselhaus M, Palacios T and Kong J 2012 Nano Lett. 12 161
[6] Sugino T and Tai T 2000 Jpn. J. Appl. Phys. 39 L1101
[7] Leparoux M and Vandenbulcke L 1999 J. Am. Ceram. Soc. 82 1187
[8] Tsuda O, Watanabe K and Taniguchi T 2010 Diam. Relat. Mater. 19 83
[9] Komatsu S, Kazami D, Tanaka H, Shimizu Y, Moriyoshi Y, Shiratani M and Okada K 2006 Appl. Phys. Lett. 88 151914
[10] Sachdev H, Müller F and Hüfner S 2011 Angew. Chem. Int. Edit. 50 3701
[11] Demin V N, Asanov P and Akkerman Z L 2000 J. Vac. Sci. Technol. A 18 94
[12] Phani A R 1999 J. Mater. Res. 14 829
[13] Gao Y, Ren W C, Ma T, Liu Z B, Zhang Y, Liu W B, Ma L P, Ma X L and Cheng H M 2013 ACS Nano 7 5199
[14] Yang Z H, Shi L, Chen LY, Gu Y L, Cai P J, Zhao A W and Qian Y T 2005 Chem.Phys. Lett. 405 229
[15] Tang C C, Bando Y, Shen G Z, Zhi C Y and Golberg D 2006 Nanotechnology 17 5882
[16] Zhao D, Feng J, Huo Q, Melosh N, Fredrickson G H, Chmelka B F and Stucky G D 1998 Science 279 548
[17] Yuan S, Toury B, Journet C and Brioude A 2014 Nanoscale 00 1
[18] Li J, Xiao X, Xu X W, Lin J, Huang Y, Xue Y M, Jin P, Zou J and Tang C C 2013 Sci. Rep. 3 3208
[19] Nazarov A S, Demin V N, Grayfer E D, Bulavchenko A I, Arymbaeva A T, Shin H J, Choi J Y and Fedorov V E 2012 Chem. Asian J. 7 554
[20] Kubota Y, Watanabe K, Tsuda O and Taniguchi T 2007 Science 317 932
[21] Wang L C, Shen L L, Xu X H, Xu L Q and Qian Y T 2012 RSC Adv. 2 10689
[22] Ma X K, Lee N H, Oh H J, Jung S C, Lee W J and Kim S J 2011 J. Cryst. Growth 316 185
[23] Xue Y M, Elsanousi A, Fan Y, Lin J, Li J, Xu X W, Lu Y, Zhang L, Zhang T T and Tang C C 2013 Solid State Sci. 24 1
[24] Azimov F, Markova I, Stefanova V and Sharipov K 2012 J. Univ. Chem. Technol. Metallurgy 47 333
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