| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films |
| Jing Yang(杨静)1, De-Gang Zhao(赵德刚)1, De-Sheng Jiang(江德生)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ling-Cong Le(乐伶聪)1, Xiao-Jing Li(李晓静)1, Xiao-Guang He(何晓光)1, Li-Qun Zhang(张立群)2, Hui Yang(杨辉)1,2 |
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
|
|
|
|
Abstract Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT- and LT-grown ones.
|
Received: 01 September 2015
Revised: 25 October 2015
Accepted manuscript online:
|
|
PACS:
|
71.20.Nr
|
(Semiconductor compounds)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
| |
72.80.Ey
|
(III-V and II-VI semiconductors)
|
| |
78.55.Cr
|
(III-V semiconductors)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Natural Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362). |
Corresponding Authors:
De-Gang Zhao
E-mail: dgzhao@red.semi.ac.cn
|
Cite this article:
Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 2016 Chin. Phys. B 25 027102
|
| [1] |
Nakamura S and Fasol G 1997 The Blue Laser Diode (New York: Springer)
|
| [2] |
Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
|
| [3] |
Mishra U K, Parikh P and Wu Y F 2002 IEEE Proc. 90 1022
|
| [4] |
Xian Y L, Huang S J, Zheng Z Y, Fan B F, Wu Z S, Jiang H and Wang G 2011 J. Cryst. Growth 325 32
|
| [5] |
Li X J, Zhao D G, Jiang D S, Chen P, Zhu J J, Liu Z S, Le L C, Yang J, He X G, Zhang L Q, Liu J P, Zhang S M and Yang H 2012 Chin. Phys. B 24 096804
|
| [6] |
Yang J, Zhao D G, Jiang D S, Liu Z S, Chen P, Li L, Wu L L, Le L C, Li X J, He X G, Wang H, Zhu J J, Zhang S M, Zhang B S and Yang H 2014 Chin. Phys. B 23 068801
|
| [7] |
Kozodoy P keller S, DenBaars S P and Mishra U K 1998 J. Cryst. Growth 195 265
|
| [8] |
Lu H and Bhat I 1996 Mater. Res. Soc. Symp. Proc. 395 497
|
| [9] |
Ke W C, Lee S J, Chen S L, Kao C Y and Houng W C 2012 Mater. Chem. Phys. 133 1029
|
| [10] |
Eiting C J, Gridowski P A, Park J, Lambert D J H, Shelton B S and Dupuis R D 1997 J. Electrochem. Soc. 144 L219
|
| [11] |
Noor Mohammad S, Botchkarev A E, Salvador A, Kim W, Aktas O and Mork H 1997 Philosophical Magazine B 76 131
|
| [12] |
Michael A. Reshchikov and Morkoç H 2005 J. Appl. Phys. 97 061301
|
| [13] |
Xian Y L, Huang S J, Zheng Z Y, Fan B F, Wu Z S, Jiang H and Wang G 2011 J. Cryst. Growth 325 32
|
| [14] |
Dai L, Ran G Z, Zhang J C, Duan X F, Lian W C and Qin G G 2004 Appl. Phys. A 79 139
|
| [15] |
Zhang R and Kuech T F 1998 Appl. Phys. Lett. 72 1611
|
| [16] |
Demechenko D O, Diallo I C and Reshchikov M A 2013 Phys. Rev. Lett. 110 087404
|
| [17] |
Kuriyama K, Mizuki Y, Sano H, Onoue A, Hasegawa M and Sakamoto I 2005 Solid State Commun. 135 99
|
| [18] |
Lyons J L, Janotti A and Van de Walle C G 2010 Appl. Phys. Lett. 97 152108
|
| [19] |
Yang J, Zhao D G, Jiang D S, Chen P, Liu Z S, Le L C, Li X J, He X G, Liu J P, Zhang S M, Wang H, Zhu J J and Yang H 2014 J. Appl. Phys. 115 163704
|
| [20] |
Chen J T, Forsberg U and Janzen E 2013 Appl. Phys. Lett. 102 193506
|
| [21] |
Koleske D D, Wickenden A E, Henry R L and Twigg M E 2002 J. Cryst. Growth 242 55
|
| [22] |
Parish G, Keller S, Denbaars S P and Mishra U K 2000 J. Electron. Mater. 29 15
|
| [23] |
Hautakangas S, Oila J, Alatalo M, Saarinen K, Liszkay L, Seghier D and Gislason H P 2003 Phys. Rev. Lett. 90 137402
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
