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Chin. Phys. B, 2016, Vol. 25(2): 027102    DOI: 10.1088/1674-1056/25/2/027102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Jing Yang(杨静)1, De-Gang Zhao(赵德刚)1, De-Sheng Jiang(江德生)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ling-Cong Le(乐伶聪)1, Xiao-Jing Li(李晓静)1, Xiao-Guang He(何晓光)1, Li-Qun Zhang(张立群)2, Hui Yang(杨辉)1,2
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract  Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT- and LT-grown ones.
Keywords:  nitride materials      p-type GaN      resistivity      carbon concentration  
Received:  01 September 2015      Revised:  25 October 2015      Published:  05 February 2016
PACS:  71.20.Nr (Semiconductor compounds)  
  71.55.Eq (III-V semiconductors)  
  72.80.Ey (III-V and II-VI semiconductors)  
  78.55.Cr (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Natural Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).
Corresponding Authors:  De-Gang Zhao     E-mail:  dgzhao@red.semi.ac.cn

Cite this article: 

Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 2016 Chin. Phys. B 25 027102

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