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Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials |
| Jing Yang(杨静)1, De-Gang Zhao(赵德刚)1,2, De-Sheng Jiang(江德生)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Xiang Li(李翔)1, Wei Liu(刘炜)1, Feng Liang(梁锋)1, Li-Qun Zhang(张立群)3, Hui Yang(杨 辉)1,3, Wen-Jie Wang(王文杰)4, Mo Li(李沫)4 |
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
4 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China |
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Abstract Physical implications of the activation energy derived from temperature dependent photoluminescence (PL) of InGaN-based materials are investigated, finding that the activation energy is determined by the thermal decay processes involved. If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in InGaN materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.
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Received: 05 March 2017
Revised: 07 April 2017
Accepted manuscript online:
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PACS:
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71.20.Nr
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(Semiconductor compounds)
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71.55.Eq
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(III-V semiconductors)
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73.21.Fg
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(Quantum wells)
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| Fund: Project supported by the National Key R&D Program of China (Grant Nos.2016YFB0401801 and 2016YFB0400803),the National Natural Science Foundation of China (Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089),Science Challenge Project,China (Grant No.JCKY2016212A503),and Beijing Municipal Science and Technology Project,China (Grant No.Z161100002116037). |
Corresponding Authors:
De-Gang Zhao
E-mail: dgzhao@red.semi.ac.cn
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Cite this article:
Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Xiang Li(李翔), Wei Liu(刘炜), Feng Liang(梁锋), Li-Qun Zhang(张立群), Hui Yang(杨 辉), Wen-Jie Wang(王文杰), Mo Li(李沫) Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials 2017 Chin. Phys. B 26 077101
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